California Institute of Technology

Barbara Wilson

Imran Mehdi

Peter H Siegel

The lift-off technique for transferring a preprocessed GaAs circuit to a quartz carrier is used to integrate GaAs active devices with distributed quartz microwave circuit elements (e.g., microstrip circuitry) in a single integrated circuit package. The present invention is therefore useful in making a variety of extremely rugged, low loss millimeter and submillimeter wave integrated circuits. By restricting the GaAs layer to a thin membrane and by impurity-doping the GaAs layer only in the regions of the active devices, the advantages of the quartz substrate in the presence of millimeter wave or submillimeter wave radiation are essentially retained.

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Altadena, CA, United States of America

Barbara Wilson