Robert Boschgmbh

Barbara Will

Alfred Goerlach

Richard Spitz

Helga Uebbing

Jochen Reinmuth

Heribert Weber

Ning Qu

Horst Meinders

Peter Urbach

Alexander Wallrauch

Kuno Wolf

Maria Del Rocio Martin Lopez

Christian Adamski

Roland Riekert

A method is described for creating at least one recess in a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one mask to the semiconductor component, forming at least one lattice having at least one or more lattice openings in the mask over the recess to be formed, the lattice opening or lattice openings being formed as a function of the etching rate and/or the dimensioning of the recess to be formed; forming the recess below the lattice.

Method for forming trenches in a semiconductor component

A semiconductor system having a pn transition and a method for manufacturing a semiconductor system are disclosed. The semiconductor system is designed in the form of a chip having an edge region, the semiconductor system includes a first layer of a first conductivity type and a second layer of a second conductivity type, which is of opposite polarity to the first conductivity type. The first layer has an edge region and a center region, the pn transition being provided between the first layer and the second layer. The second layer is more weakly doped in its edge region than in its center region, and the boundary surface of the pn transition at the edge region is non-parallel to the main chip plane.

Semiconductor system having a pn transition and method for manufacturing a semiconductor system

A method is proposed for fastening at least one electrical component to a substrate using solder, in which elevations are produced in the solder substrate, the elevations being at least as high as the thickness of a solder layer to be produced. In another step, the solder is laid upon the elevations, and in a further step, the elevations are pressed down until they have reached approximately the height of the solder, so that a soldering procedure may follow. The method is used for producing exactly specified thicknesses of solder layers having tolerances less than 10 micrometers.

Soldering method for mounting electric components

A method is proposed for producing semiconductor components, in which at least one doped region is introduced in a wafer, a solid glass layer provided with dopant being applied on at least one of the two sides of a semiconductor wafer, in another step, the wafer being heated to high temperatures so that the dopant from the glass layer penetrates deep into the wafer to produce the at least one doped region; and in a further step, the glass layer being removed. The method is used for producing homogeneous, heavily doped regions, it also being possible to introduce these regions in the wafer on both sides and for the regions to be of different doping type.

Method for producing highly doped semiconductor components

It is proposed to implement the emitter short-circuit structure of a multilayer diode by providing grooves which cut through topmost layer of the multilayer diode. A metal layer applied thereon electrically shorts the topmost layer to subjacent layer

Multi-layer diodes and method of producing same

Growing community of inventors

Herrenberg, Germany

Barbara Will