H.c. Starck Gmbh

Materion Newton Inc.

Barbara L Cox

Francois Dary

Helia Jalili

Terrance B Tripp

Gary Alan Rozak

Shuwei Sun

Yen-Te Lee

Qi Zhang

In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.

Electronic devices having bilayer capping layers and/or barrier layers

In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

Current-induced dark layer formation for metallization in electronic devices

Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.

Sputtering targets and devices including Mo, Nb, and Ta, and methods

A process for producing sintered pellets made from blends of refractory metal and refractory metal nitride powders were found to have a higher fraction of intra-agglomerate pores than those made from the refractory metal or refractory metal nitride alone resulting in improved capacitor grade powders, anodes and finished capacitors therefrom. The pellet porosity and total intrusion volume maximizes when the mixture is in the 50-75 W/W % refractory metal nitride range. The total pellet pore surface area was found to be relatively independent of refractory metal nitride concentration above 50%. A substrate consisting of a 50/50 or 25/75 W/W % refractory metal/refractory metal nitride powder mixture should produce solid capacitors with higher capacitance recovery and lower ESR.

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West Roxbury, MA, United States of America

Barbara L Cox