University of California

Barbara Knowlton

Itzhak Fried

Nanthia Suthana

The various embodiments described herein include methods, devices, and systems for enhancement of memory. In one aspect, a method includes: (1) implanting intracranial electrodes in a patient, wherein the electrodes are placed selectively at a specific brain site; (2) determining a threshold for eliciting an after-discharge threshold of the patient, and (3) stimulating the electrodes with current set below the after-discharge threshold while the patient is in a particular phase of sleep so as to enhance memory of the patient.

Site specific deep brain stimulation for enhancement of memory

A site-specific deep brain stimulation for enhancement of memory is described. A method of the site-specific deep brain stimulation for enhancement of memory may include implanting intracranial depth electrodes in a patient, wherein the electrodes are placed in right and/or left entorhinal regions, and stimulating the electrodes with current set below an after-discharge threshold. The method may include stimulation at a specific brain site in the medial temporal lobe, stimulation (ODTS) at specific stages of information processing. A system for site specific deep brain stimulation of entorhinal regions during specific stages of information processing is also described.

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Los Angeles, CA, United States of America

Barbara Knowlton