Honeywell G.m.b.h.

Barbara G Barany

J David Zook

Robert P Ulmer

Scott T Reimer

A photoconductor has an active layer of gallium nitride having approximately 10.sup.15 to 5.times.10.sup.15 net donor sites per cubic centimeter and is sensitive to UV radiation. This photoconductor has at least one of a sheet resistance in the approximate range of 10.sup.4 to 5.times.10.sup.6 ohms/unit area and a relatively low level of photoluminescence in the range from about 430-450 nm when excited with light of energy higher than the bandgap energy of 3.4 eV. These criteria tend to define similar semiconductor materials which can form the active layer of an ultraviolet (UV) photodetector having the improved characteristics of a relatively low dark resistance, high sensitivity over at least a range of UV radiation intensity, and decreasing gain with increasing UV radiation.

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Falcon Heights, MN, United States of America

Barbara G Barany