Advanced Technology Materials, Inc.

Cree Gmbh

Kopin Corporation

Invoy Holdings Inc.

Barbara E Landini

George R Brandes

Xueping Xu

Robert P Vaudo

Jeffrey S Flynn

Michael Albert Tischler

Roger E Welser

James A McIntyre

David Keogh

Michael A Tischler

Joan K Vrtis

Paul E Cranley

Paul M DeLuca

Roberta Druyor-Sanchez

David Luttrull

Shane Bravard

David M Keogh

Hueping Xu

Georges R Brandes

Some embodiments of the invention provide a mouthpiece for use with an electronic analyzer for breath analyte detection in an individual. The mouthpiece includes a biosensor and a hydration system. The biosensor includes a chemically active area where a chemical reaction takes place and the hydration system delivers a liquid to the chemically active area of the biosensor to at least one of enhance, enable, and facilitate the chemical reaction. The mouthpiece further includes hardware to transmit breath analyte data.

Breath delivery system and method

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10, nitrogen source material partial pressure in a range of from about 1 to about 10torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 10microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates

InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.

Method of preparing indium phosphide heterojunction bipolar transistors

A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.

Silicon carbide epitaxial layers grown on substrates offcut towards <1100>

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10 , nitrogen source material partial pressure in a range of from about 1 to about 10 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES

Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>

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North Attleboro, MA, United States of America

Barbara E Landini