Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique

Barbara De Salvo

Manan Suri

Gabriel Molas

Thomas Ernst

Olivier Bichler

Valentina Ivanova-Hristova

Damien Querlioz

Christian Gamrat

Stephane Becu

Stéphanel Becu

A neuromorphic system comprises a set of at least one input neuron, a set of at least one output neuron and a synaptic network formed from a set of at least one variable-resistance memristive component, said synaptic network connecting at least one input neuron to at least one output neuron, the resistance of the at least one memristive component being adjusted by delivering to the synaptic network write pulses generated by the at least one input neuron, and return pulses generated by the at least one output neuron, the characteristics of the write and return pulses being deduced from the intrinsic characteristics of the at least one memristive component so that the combination of a write pulse and a return pulse in the at least one memristive component results in a modification of its resistance according to a learning rule chosen beforehand.

Neuromorphic system exploiting the intrinsic characteristics of memory cells

A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material.

Structure and production process of a microelectronic 3D memory device of flash NAND type

A delay generator comprises at least one programmable resistor Rmade of a chalcogenide-based phase-change material, said resistor Rbeing initialized, so as to generate a delay, in a way such that the resistance of the resistor Requals a pre-set initial value Rand such that the chalcogenide is in the amorphous phase, and a comparator comparing a reference electrical quantity that is stable over time with a variable electrical quantity representative of the resistance of the programmable resistor R, the comparator generating a singularity signal s, said singularity being generated when the difference between the two electrical quantities changes sign.

Delay generator using a programmable resistor based on a phase-change material

A process for fabricating a charge storage layer comprising metal particles of a memory cell, said layer consisting of an organic layer comprising, on the surface, said metal particles, said process comprising the following steps: (a) a step of grafting, onto a metallic, semiconductor or electrically insulating substrate, an organic layer comprising, on the surface, groups capable of complexing at least one metallic element in cationic form; (b) a step of bringing said layer into contact with a solution comprising said metallic element in cationic form, by means of which said metallic element is complexed by said abovementioned groups; and (c) a step of reducing said complexed metallic element to the metallic element in oxidation state 0, by means of which metal particles are obtained.

Process for fabricating a charge storage layer of a memory cell

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Montbonnot Saint Martin, France

Barbara De Salvo