Osram Opto Semiconductors Gmbh

Barbara Behr

Marcus Zenger

Mathias Wendt

Andreas Ploessl

Andreas Weimar

Georg Hartung

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200&#xb0; C., and wherein the following applies: c11&#x2265;c25 and c11&#x2265;c13&#x2265;c12.

Device and method for producing a device

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component, a second component and a connecting element directly arranged between the first component and the second component, wherein the connecting element includes at least a first metal, which is formed as an adhesive layer, a diffusion barrier and a component of a first phase and a second phase of the connecting element, wherein the adhesive layer is arranged on the first component and/or the second component, wherein the first phase and/or the second phase includes, besides the first metal, further metals different from the first metal, wherein a concentration of the first metal in the first phase is greater than a concentration of the first metal in the second phase, and wherein the connecting element includes a layer of a silicide of the first metal.

A device is specified, said device comprising a first component (), a second component (), and a connecting component () comprising at least a first region () and at least a second region (). The composition of the first region () differs from the composition of the second region (). The connecting component () is arranged between the first component () and the second component (). The connecting component () comprises different kinds of metals, the first region () of the connecting component () comprises a first metal (), and the concentration of the first metal () is greater in the first region () than the concentration of the first metal () in the second region ().

Device comprising a connecting component and method for producing a connecting component

An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein

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Abensberg, Germany

Barbara Behr