Texas Instruments Corporation

Baoqiang Niu

Seetharaman Sridhar

Hong Yang

Yunlong Liu

Sunglyong Kim

Rui Liu

Ya Ping Chen

Fei Ma

Shengpin Yang

Zhi Peng Feng

Zhipeng Feng

Yaping Chen

A semiconductor device, and methods of forming the same. In one example, the semiconductor device includes a trench in a substrate having a top surface, and a shield within the trench. The semiconductor device also includes a shield liner between a sidewall of the trench and the shield, and a lateral insulator over the shield contacting the shield liner. The semiconductor device also includes a gate dielectric layer on an exposed sidewall of the trench between the lateral insulator and the top surface. The lateral insulator may have a minimum thickness at least two times thicker than a maximum thickness of the gate dielectric layer.

Semiconductor device including a lateral insulator

Growing community of inventors

Chengdu, China

Baoqiang Niu