Huazhong University of Science and Technology

Baokun Song

Shiyuan Liu

Xiuguo Chen

Hao Jiang

Honggang Gu

Mingsheng Fang

Simin Zhu

Zhengfeng Guo

The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S: using a p-light amplitude reflection coefficient rand an s-light amplitude reflection coefficient rof an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio &#x3c1; of the ultra-thin film: S: performing a second-order Taylor expansion to at d=0 while taking 2&#x3c0;d/&#x3bb; as a variable to obtain a second-order approximation form; S: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.

Rapid measurement method for ultra-thin film optical constant

The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tand a transmission matrix Tare determined by a predetermined initial value &#x3b5;(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix T, the transmission matrix T, and an incident matrix T, a theoretical Mueller matrix spectrum MM(E) of the material to be measured is determined by the transfer matrix T. A fitting analysis is performed on the theoretical Mueller matrix spectrum MM(E) and a measured Mueller matrix spectrum MM(E) of the material to be measured to obtain the dielectric tensor of the material to be measured.

Method for measuring dielectric tensor of material

A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transition analysis. The invention realizes the analysis and interpretation of the optical transition characteristics occurring at the materials from the perspective of physics, which has the advantages of reliable operation process system and accurate and reliable analysis results.

Material optical transition analysis method and system

Growing community of inventors

Hubei, China

Baokun Song