Boe Technology Group Co., Ltd.

Baojiang Zhang

Zhongyuan Wu

Liye Duan

Chunsheng Jiang

Jingfei Fang

A pixel unit is used in an array substrate of a display device. In one embodiment, it comprises a gate line, a source-drain line and a thin-film transistor; and the gate line is in an overlapped structure comprising a first MoW layer, a Cu layer and a second MoW layer overlapped successively; and a gate of the thin-film transistor is formed of the first MoW layer. In another embodiment, the source-drain line is in a same overlapped structure; and a source and a drain of the thin-film transistor are formed of the first MoW layer. The first embodiment is achieved by means of a halftone process while the second embodiment is achieved by means of a lift off process. Diffusion of Cu in the gate layer or in the source-drain layer towards the oxide active layer is prevented. Also disclosed is a method for manufacturing the abovementioned pixel unit, an array substrate comprising the abovementioned pixel unit, a display device comprising the abovementioned pixel unit, and a method for manufacturing abovementioned array substrate and display device.

Pixel unit, array substrate, display device and method for manufacturing the same including MoW/Cu/MoW conductive line

Provided are a pixel circuit and driving method thereof and a display apparatus. The pixel circuit comprises a first transistor (T), a second transistor (T), a third transistor (T), a storage capacitor (C), a parasitic capacitor (C) and a light emitting device (L). A first electrode of the first transistor (T) is connected to a first power source signal terminal, and its second electrode is connected to a first electrode of the third transistor (T); the gate of the second transistor (T) is connected to a first control signal terminal (S), its first electrode is connected to a data signal terminal (DATA), and its second electrode is connected to the gate of the first transistor (T); the gate of the third transistor (T) is connected to a second control signal terminal (S), and its second electrode is connected to one terminal of the light emitting device (L); one terminal of the storage capacitor (C) is connected to the gate of the first transistor (T), and the other terminal of the storage capacitor is connected to one terminal of the light emitting device (L); one terminal of the parasitic capacitor (C) is connected to one terminal of the light emitting device (L), and the other terminal of the parasitic capacitor (C) is connected to the other terminal of the light emitting device (L); and the other terminal of the light emitting device (L) is also connected to a second power source signal terminal (ELVSS). The pixel circuit can effectively compensate for the threshold voltage shift of the TFTs and improve the display effect.

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Beijing, China

Baojiang Zhang