Hewlett-packard Development Company, L.p.

Bao-Sung Bruce Yeh

Michael John Regan

James Richard Przybyla

Kenneth James Faase

James McKinnell

Arthur Piehl

Eric Lee Nikkel

Adel Jilani

S Jonathan Wang

Hung Liao

Zhizang Chen

Cathy P Peltier

Chien-Hua Chen

Gary A Gibson

Charles Craig Haluzak

Michael G Monroe

John R Sterner

Kirby Sand

An electronic light modulator device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having at least first and second optical states, at least one of the optical states being tunable and the other not tunable.

Light modulator with tunable optical state

Various embodiments of a MEMs structure including flexures movably supporting a reflective face are disclosed.

Flexures

A method of forming a micro-display includes forming a device that includes forming a partially reflecting layer on a first substrate and forming a plate overlying the partially reflecting layer, and adhering the device to a second substrate.

Micro-displays and their manufacture

A pixel device, comprising; a first plate, a second plate disposed under the first plate, and a third plate disposed under the second plate; a first power supply for providing a first voltage to the first plate; a second power supply for providing a second voltage to the second plate; and a third power supply for providing a third voltage to the third plate.

Pixel device

A transistor includes a base, a collector, and an emitter comprising a group III/VI semiconductor. Microcircuits having at least one metal oxide semiconductor (MOS) transistor and the previously described transistor are provided. Processes for manufacturing a transistor and a BiMOS microcircuit are also provided.

Transistor with group III/VI emitter

A re-recordable data storage medium is disclosed. The medium in one embodiment includes a phase-changeable layer and an intermediate layer. A junction between the intermediate layer and another layer of the medium provides a conduction barrier under no illumination that is substantially diminished under illumination of the regions of the phase-changeable layer that are in the appropriate phase.

Re-recordable data storage medium utilizing conduction barrier

An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (V) implant.

LDMOS and CMOS integrated circuit and method of making

A transistor includes a means for providing a non-silicon-based emitter with a flexible structure to relieve lattice mis-match between the emitter and the base.

Transistor with means for providing a non-silicon-based emitter

An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (V ) implant.

A re-recordable data storage medium of one embodiment includes a substrate layer, a phase-changeable layer, and an intermediate layer. The substrate layer has a semiconductor type selected from p-type and n-type. The phase-changeable layer has a first phase corresponding to a first storable logical value, and a second phase corresponding to a second storable logical value. The phase-changeable layer has a semiconductor type identical to that of the substrate layer. The intermediate layer is between the phase-changeable layer and the substrate layer, and has a semiconductor type opposite to that of the phase-changeable and substrate layer. The substrate, phase-changeable, and intermediate layers act as a transistor under selective illumination of the phase-changeable layer.

Growing community of inventors

Corvallis, OR, United States of America

Bao-Sung Bruce Yeh