Taiwan Semiconductor Manufacturing Comp. Ltd.

Bao Ru Young

Ming Zhu

Hung-Chih Chen

Ren-Jyh Leu

Harry-Hak Lay Chuang

Kun I Lee

Hui Wen Lin

A semiconductor device including a first gate structure associated with a first type of transistor and a second gate structure of a second type of transistor. The first gate structure includes a capping layer, a first metal layer having a first type of work function on the capping layer, and a second metal layer having a second type of work function, overlying the first metal layer and a fill layer on the second metal layer. The second type of work function is different than the first type of work function. The second gate structure includes the gate dielectric and the second metal layer formed on the gate dielectric, and the fill layer on the second metal layer.

Metal gate semiconductor device

This invention discloses a novel design to obtain a good coating uniformity and to reduce the volume of viscous materials when coating by spraying the viscous material on the wafer during the first time period at a first predetermined pressures; spraying the viscous material on the wafer at a second predetermined pressure in response to the end of the first time period, the second predetermined pressure being lower than the first predetermined pressure; and spraying the viscous material on the wafer during a second time period at a time-varying pressure, the time-varying pressure being increased from the second predetermined pressure to a third predetermined pressure during the second time period.

Method and system for spraying a viscous material on a wafer

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Zhubei, Taiwan

Bao Ru Young