Chinese Academy of Sciences

Bangming Chen

Jing Min Xu

Jiang Yan

Bo Tong Liu

Hongli Wang

Zhitang Song

Chunlong Li

Bo Tang

Feng Rao

Mengmeng Yang

Yuefeng Gong

Zhaoyun Tang

Yefeng Xu

Yong Kang

A semiconductor device, including: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer.

Semiconductor device and method for manufacturing the same

The present invention provides a phase-change storage unit containing a TiSiN material layer and a method for preparing the same. The phase-change storage unit includes a phase-change material layer and a lower electrode located there below, the phase-change material layer and the lower electrode are connected by a TiSiN material layer, the lower electrode includes a bottom and a sheet side connected to the bottom, the sheet side is perpendicular to the bottom to form a blade structure, and the top of the sheet side contacts the TiSiN material layer. The present invention adopts annealing to increase the grain size of the electrode so as to reduce the overall resistance of the device and form a TiSiN material layer on the top of the lower electrode so as to reduce the effective operation region. The phase-change storage unit of the present invention is applied to a phase-change memory to achieve the advantages such as low power consumption, high density and high data retention performance.

Phase-change storage unit containing TiSiN material layer and method for preparing the same

Growing community of inventors

Beijing, China

Bangming Chen