Everbright Institute of Semiconductor Photonics Co., Ltd.

Suzhou Everbright Photonics Co., Ltd.

Bangguo Wang

Jun Wang

Shaoyang Tan

Quanling Li

Li Zhou

Xinsheng Liao

Yintao Guo

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a semiconductor substrate layer; an N-type waveguide structure arranged on the semiconductor substrate layer; and an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer. The N-type waveguide structure includes a first N-type waveguide layer and a second N-type waveguide layer that are stacked. The second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer. A conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer. A valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer. The semiconductor structure increases light emitting efficiency.

Semiconductor structure and method for manufacturing same

Growing community of inventors

Suzhou, China

Bangguo Wang