International Business Machines Corporation

Balasubramanian Pranatharthi Haran

Kangguo Cheng

Tenko Yamashita

Theodorus E Standaert

Shom Ponoth

JunJun Li

Injo Ok

Andrew Mark Greene

Thomas N Adam

Charan V Surisetty

A technique relates to forming a semiconductor device. A starting semiconductor device having a fin structure patterned in a substrate, and a gate formed over the fin structure, the gate having a mid-region and an end-region is first provided. A trench is then patterned over the mid-region of the gate and a trench is patterned over the end-region of the gate. The patterned trenches are then etched over the mid-region of the gate and the end-region of the gate to form the trenches. A conformal low-k dielectric layer can then be deposited over the structure to fill the trenches and pinch off the trench formed in the mid-region and the trench formed in the end-region.

Semiconductor device replacement metal gate with gate cut last in RMG

FinFET device formed by a replacement metal-gate method including a gate cut-last step

Integrated passive devices for silicon on insulator (SOI) FinFET technologies and methods of manufacture are disclosed. The method includes forming a passive device on a substrate on insulator material. The method further includes removing a portion of the insulator material to expose an underside surface of the substrate on insulator material. The method further includes forming material on the underside surface of the substrate on insulator material, thereby locally thickening the substrate on insulator material under the passive device.

Integrated passive devices for finFET technologies

Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.

Semiconductor structure with deep trench thermal conduction

Integrated passive devices for FinFET technologies

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Watervliet, NY, United States of America

Balasubramanian Pranatharthi Haran