Samsung Electronics Co., Ltd.

Nanoconduction, Incorporated

Bala Padmakumar

Carlos Dangelo

Yi Zhang

Ephraim Suhir

Subrata Dey

Peter V Schwartz

Barbara Wacker

Yuan Xu

Darin Olsen

Arthur Boren

One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at &#x2dc;1350 cmwith an intensity ID, a G peak at &#x2dc;1585 cmwith an intensity IG, and an intensity ratio I/Iof less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cmK/W or less.

Carbon nanotube-based structures and methods for removing heat from solid-state devices

An in-chip system and method for removing heat from integrated circuits is disclosed. One embodiment is a substrate with a front side and a back side. The front side of the substrate is capable of having formed thereon a plurality of transistors. A plurality of structures within the substrate contain a solid heat conductive media comprising carbon nanotubes and/or a metal, such as copper. At least some of the plurality of structures extend from the back side of the substrate into the substrate. In some embodiments, the carbon nanotubes are formed within the substrate using a catalyst.

In-chip structures and methods for removing heat from integrated circuits

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Mountain View, CA, United States of America

Bala Padmakumar