Kioxia Corporation

Bairu Yan

Kazuhiko Yamamoto

Yoshiki Kamata

According to one embodiment, a memory device includes a first electrode, a second electrode, and a resistive layer provided between the first electrode and the second electrode, containing at least one of antimony (Sb) and bismuth (Bi) as a first element, and tellurium (Te) as a second element, and having a variable resistance value. The resistive layer includes a first layer having a hexagonal crystal structure containing the first element and the second element. The first layer contains a group 14 element as a third element.

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Kanagawa, Japan

Bairu Yan