Zte Corporation

Baiqing Zong

Qing Yang

Feng Guo

Yijun Cui

Qi Tian

Zhiyong Zhao

Jianli Wang

Xuelu Mu

Dapeng Wang

Wu Zeng

Provided is a signal cancellation method for a wireless communication system, including: splitting a transmitted signal to obtain a main channel signal transmitted on a main channel and an auxiliary channel signal transmitted on an auxiliary channel; performing digital domain channel characteristic matching processing on the main channel signal and the auxiliary channel signal respectively to obtain a main channel characteristic matched signal and an auxiliary channel characteristic matched signal; and combining the main channel characteristic matched signal and the auxiliary channel characteristic matched signal which are coupled to a receiving channel in order for signal cancellation. A signal cancellation device for a wireless communication system is also provided. Through the technical solution of the disclosure, the signal cancellation problem of a bandwidth can be solved better.

Signal cancellation method and device for wireless communication system

A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device.

Transistor, heat sink structure thereof and method for manufacturing same

Growing community of inventors

Shenzhen, China

Baiqing Zong