Samsung Electronics Co., Ltd.

Baik-woo Lee

Young-jae Kim

Seong-woon Booh

Jae-gwon Jang

Chang-mo Jeong

Jai-kwang Shin

Jae-joon Oh

Woo-chul Jeon

Ji-Hyuk Lim

Eun-Seok Song

Dong-hun Lee

Seok-hyun Lee

Hyung-gil Baek

Chul-yong Jang

Jeong-Won Yoon

Young-hun Byun

In one embodiment, a magneto-resistive chip package includes a circuit board; a shielding body including a shielding base part positioned on the circuit board and a shielding intermediate part extending from one side of the shielding base part; a magneto-resistive chip positioned on the shielding base part and including a magneto-resistive cell array; an internal connection part electrically connecting the magneto-resistive chip to the circuit board; an encapsulation part encapsulating the magneto-resistive chip on the circuit board, and having an upper surface that is higher than an upper surface of the magneto-resistive chip; and a shielding cover positioned on the shielding intermediate part, and on the encapsulation part.

Magneto-resistive chip package including shielding structure

In one embodiment, a semiconductor device comprising, a substrate comprising a wiring layer, a first conductive shielding layer disposed on the substrate and electrically isolated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface, a semiconductor chip disposed on the first conductive shielding layer, a molding member disposed over the first conductive shielding layer to cover the semiconductor chip, a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface, and a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface. The bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface. The top surface of the bonding portion contacts the second bonding surface to form a second contact surface. An area of the second contact surface is larger than an area of the second end surface.

Semiconductor device

A printed circuit board is provided. The printed circuit board comprises a base substrate comprising a chip mounting region on an upper surface thereof, a plurality of connection pad structures in the chip mounting region, and an extension pattern on the base substrate, spaced from each of two adjacent connection pad structures from among the plurality of connection pad structures, and extending along the two adjacent connection pad structures. Upper surfaces of the plurality of connection pad structures are positioned at a higher level than an upper surface of the extension pattern.

Printed circuit board and semiconductor packages including the same

Provided is a method of manufacturing a semiconductor package. The method includes mounting a semiconductor device on a substrate; disposing a mold on the substrate, wherein the mold is formed to cover the semiconductor device such that at least one inner side surface of the mold has a slope; providing a molding material into the mold to encapsulate the semiconductor device; removing the mold from the substrate; and forming an electromagnetic shielding (EMS) layer to cover a top surface and side surfaces of the molding material.

Semiconductor package and method of manufacturing the same

Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material. The intermetallic compound may include AgSn. A method of manufacturing the semiconductor device package may include forming a bonding layer, which bonds a semiconductor chip to a substrate, by using a mixed paste including metal particles and a solder material. The bonding layer may be formed by forming an intermetallic compound, which is formed by heating the mixed paste to react the metal particles with the solder material.

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A semiconductor device includes a substrate having a first part and a second part, the first and second parts being continuous with each other and at different height levels, a first semiconductor chip overlapping the first and second parts of the substrate, an electrical interconnection structure connecting the first part of the substrate and the first semiconductor chip, a distance between the first part of the substrate and the first semiconductor chip being shorter than a distance between the second part of the substrate and the first semiconductor chip, and at least one electronic component in a space between the second part of the substrate and the first semiconductor chip.

Semiconductor package

A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure.

Power semiconductor devices

A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer including a second nitride semiconductor material to induce a 2-dimensional electron gas (2DEG) at the channel layer. The passive device may be a resistor, an inductor, or a capacitor.

Nitride semiconductor based power converting device

According to example embodiments of inventive concepts, a power device includes a semiconductor structure having a first surface facing a second surface, an upper electrode, and a lower electrode. The upper electrode may include a first contact layer that is on the first surface of the semiconductor structure, and a first bonding pad layer that is on the first contact layer and is formed of a metal containing nickel (Ni). The lower electrode may include a second contact layer that is under the second surface of the semiconductor structure, and a second bonding pad layer that is under the second contact layer and is formed of a metal containing Ni.

Power device and power device module

A multilayer laminate package and a method of manufacturing the same are provided. The multilayer laminate package includes a cavity layer, a non-cavity layer, an electronic component, and a metalized blind via. The cavity layer includes a first adhesive layer and two first circuit layers, which are stacked with the first adhesive layer between, and an opening. The non-cavity layer includes a second adhesive layer and a second circuit layer. The non-cavity layer is bonded to the cavity layer with the second adhesive layer so as to close one side of the opening. The electronic component is mounted in the opening and is electrically connected to the non-cavity layer exposed through the opening. The metalized blind via electrically connects the non-cavity layer to one of the circuit layers of the cavity layer.

Multilayer laminate package and method of manufacturing the same

A folded stacked package and a method of manufacturing the same are provided. The folded stacked package includes a flexible board or substrate comprising first, second and third device packaging units, and first and second folding unit units. The flexible board has wiring patterns formed thereon; one or more active devices disposed in at least one of the first, second, and third device packaging units; and one or more passive devices disposed on a surface of each of the first and second device packaging units. The passive devices include one or more first passive devices disposed on the surface of the first device packaging unit and one or more second passive devices disposed on the surface of the second device packaging unit. The first and second passive devices do not overlap each other when the flexible board is folded at the folding unit.

Growing community of inventors

Gwangmyeong-si, South Korea

Baik-woo Lee