Samsung Electronics Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Baik-soon Choi

Sung-bum Cho

Jin-sung Kim

Sang-Mun Chon

Kyue-Sang Choi

Eun-Hee Shin

Seung-Hyun Ahn

Eun-Mi Bae

Jung-Ki Kim

Jung-il An

Jin-Sung Kim

Kyoung-mi Kim

Jae-ho Kim

Kwang-sub Yoon

Sang-Kyu Park

Shi-Yong Yi

Hee-jung Park

Dae-Joung Kim

Sung-chul Kang

Yeu-Young Youn

Hoe-Sik Chung

Ok-Seok Jang

Mi-Sook Jeon

Hak-pil Kim

Sang-tae Kim

Jung-sik Choi

Sue-ryeon Kim

Kyong-ho Lee

Young-taek Hong

Seong-min Kim

Myung-Beom Park

Jin-Hee Lee

Young-koo Lee

Sung-bae Kim

Hyung-pyo Hong

Jae-saeng Lee

In-goo Kang

Young-Cheul Lim

Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)NF, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

Composition for removing silicone resins and method of thinning substrate by using the same

A tin plating solution and a method for fabricating a semiconductor device are provided. The tin plating solution comprises tin ions supplied from a soluble tin electrode, an aliphatic sulfonic acid having a carbon number of 1 to 10, an anti-oxidant, a wetting agent, and a grain refiner that is an aromatic carbonyl compound.

Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution

A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Thinner composition and method of removing photoresist using the same

A conditioning disk and a conditioner for a chemical mechanical polishing (CMP) pad, and a method of fabricating, reworking, and cleaning the conditioning disk, are utilized to improve conditioning efficiency, and to reduce production expenses. The conditioning disk for a CMP pad is divided into regions defined by a size difference of abrasive grains formed on the body surface in each region of the conditioning disk. The method of fabricating the conditioning disk is performed by forming adhesive films for attaching the abrasive grains onto the body surface multiple times. In addition, a used conditioning disk may be reworked by detaching the abrasive grains from the body, and attaching new abrasive grains. A used conditioning disk can also be cleaned of by-products of the conditioning process by a cleaning method using a HF solution or BOE (buffered oxide etch) solution.

Method of reworking a conditioning disk

A thinner composition is effective in removing a variety of photoresists, and includes propylene glycol mono-methyl ether acetate, ethyl 3-ethoxy propionate and at least one of &ggr;-butyro lactone and propylene glycol mono-methyl ether. The thinner composition can selectively strip a photoresist coated on a backside and at an edge portion of a substrate, as well as a photoresist coated on a whole front surface of the substrate.

Thinner composition and method of stripping a photoresist using the same

There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS) According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a ClF gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

Chemical vapor deposition method for manufacturing semiconductor devices

Method of cleaning conditioning disk

A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

Photoresist stripper compositions

A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.

Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning

Conditioner and conditioning disk for a CMP pad, and method of fabricating, reworking, and cleaning conditioning disk

There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS). According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a ClF gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber

A metallization process for manufacturing semiconductor devices and a system that uses the same that minimizes corrosion failures in aluminum patterns. The process for the metal pattern formation is carried out by loading a semiconductor wafer into an etching chamber, the semiconductor wafer having a photoresist pattern formed over a metal material layer, stabilizing the environment in the etching chamber, main-etching the metal material layer to the etch-end point by using the photoresist pattern as an etch mask while supplying etching gas containing chlorine (Cl ) into the etching chamber, over-etching the metal material layer for a certain period of time over the etch-end point so as to form metal patterns, purging the etching chamber after the over-etching step, and unloading the wafer from the etching chamber. The pressure in the transfer module is optimized, and the load lock chamber is continuously purged.

Metallization process for manufacturing semiconductor devices

There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS). According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a CiF,gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

Chemical vapor deposition apparatus for manufacturing semiconductor devices

An apparatus for sampling particles from a processing chamber used in the fabrication of semiconductor devices includes a sampling line sequentially having a sampling port, a sampling air valve, a particle sampler and an isolation valve. A pumping line is connected between the isolation valve and a pump, and a discharge line is connected between the pump and a discharge port. The apparatus includes a purge line sequentially having a purge gas source, a purge air valve, and a divergence end. A purge-sampler line connects the divergence end to the sampling line between the sampling air valve and the particle sampler, and includes a purge-sampler air valve. A purge-pump line connects the divergence end to the pumping line, and includes a purge-pump air valve. The apparatus also includes an isolation valve bypass line connected at one end to the sampling line between the particle sampler and the isolation valve, connected at the other end to the pumping line between the isolation valve and the purge-pump line, and including a bypass air valve. A control unit controls the operation of the isolation valve, the pump, and the air valves.

Method for sampling particles present in a processing chamber

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Kyungki-do, South Korea

Baik-soon Choi