Taiwan Semiconductor Manufacturing Comp. Ltd.

Bai-Tao Huang

Dun-Nian Yaung

Jen-Cheng Liu

Tzu-Hsuan Hsu

Shyh-Fann Ting

Yen-Ting Chiang

Tse-Hua Lu

Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a substrate having a first side and a second side. The substrate includes a pixel region. A photodetector is in the pixel region. A first doped region is in the pixel region. A second doped region is in the pixel region. The second doped region is vertically between the first doped region and the first side of the substrate. A doped well is in the substrate and laterally surrounds the pixel region. The doped well is partially in the second doped region. A portion of the second doped region is vertically between the doped well and the second side of the substrate. A trench isolation structure is in the semiconductor substrate and laterally surrounds the pixel region. A footprint of the trench isolation structure is within a footprint of the doped well.

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Hsinchu, Taiwan

Bai-Tao Huang