Denso Corporation

Bahman Hossini Soltani

Hiroaki Mizuno

Motohiro Ishibashi

Sadamu Shiotsuki

Hiroki Matsuzawa

Kazuya Takeuchi

Manabu Tomisaka

Yasuo Ishihara

Tetsuji Yamaguchi

Shinji Mukota

Shusaku Nakazawa

Yasushi Hibi

Nobuyuki Nunome

Tomoki Kawazu

Sodai Nomura

Osamu Nishikawa

Yutaro Isshiki

Riku Onishi

Kiyoshi Katoh

Shiro Okita

Kazufumi Aoki

Yuya Kato

Naoki Maruno

Kyohei Kotake

Kazutoshi Sasayama

Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.

Surface processing apparatus and surface processing method for SiC substrate

A manufacturing method of semiconductor wafers includes preparing a ingot having a first major surface and a second major surface in a back side of the first major surface, a peeling layer being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor from the ingot.

Method of manufacturing semiconductor wafers

Provided is a production method of a SiC wafer which can increase the yield of a SiC wafer which can be prepared from a produced SiC single crystal ingot and the product yield of a semiconductor chip. In forming cylindrical column parts from a SiC single crystal ingot, the diameters of the cylindrical column parts are gradually changed. Specifically, the SiC single crystal ingot configured to have a frustoconical shape is made into, instead of cylindrical column parts all having identical diameters, cylindrical column parts whose diameters increase from the upper surface toward the lower surface of the SiC single crystal ingot.

Production method of silicon carbide wafer, production method of semiconductor substrate, and production method of silicon carbide semiconductor device

To provide a semiconductor device capable of effectively releasing heat from a semiconductor element, the semiconductor device includes a semiconductor element, a heat sink connected thermally to the semiconductor element and a coolant flow channel formed facing the heat sink. The heat sink is integrally composed of multiple cooling fins projecting toward the coolant flow channel. A linear base of each of the multiple cooling fins inclines relative to a direction in which a coolant is supplied through the coolant flow channel. An inclination of a linear base of each of the cooling fins arranged adjacent to each other in the direction relative to the coolant flow direction is substantially opposite from each other.

Semiconductor device

A power conversion apparatus includes a semiconductor element, a plurality of lead frames, a flow-passage formation body, an insulating portion, a metal joining material, and a resin sealing portion. The plurality of lead frames are electrically connected to the semiconductor element. The flow-passage formation body forms a coolant flow passage in which a coolant flows. The insulating portion is arranged between the lead frame and the flow-passage formation body to provide insulation between the lead frame and the flow-passage formation body. The metal joining material joins the insulating portion and the flow-passage formation body. The resin sealing portion seals the semiconductor element and the lead frames. The semiconductor element and the lead frames are integrated with the flow-passage formation body to form a semiconductor cooling assembly by the resin sealing portion.

Plurality of cooling tubes with coolant for a power conversion package

A method of producing a reactor equipped with a core in which a coil is disposed, comprises: preparing one of a vessel and a casing; preparing a positioning member with fins; putting a magnetic powder/resin mixture in the one of the vessel and the casing; stirring the magnetic powder/resin mixture within the one of the vessel and the casing using the fins of the positioning member; arranging a coil and the positioning member within the magnetic powder/resin mixture; and solidifying the magnetic powder/resin mixture to make the core including the positioning member and the fins.

Method of producing a reactor

The method of manufacturing a molded article including a component insert-molded in a molding material mixed with solid powder includes an injecting step of injecting the molding material and the solid powder into a molding die, an agitating step of agitating the molding material and the solid powder within the molding die to disperse the solid powder in the molding material, and an embedding step of pressing and embedding the component into an agitated mixture of the molding material and the solid powder.

Method of manufacturing molded article including component insert-molded in molding material mixed with solid powder

The exemplary embodiment provides a method of manufacturing a molded article including a component insert-molded in a molding material mixed with solid powder. The method includes an injecting step of injecting the molding material and the solid powder into a molding die, an agitating step of agitating the molding material and the solid powder within the molding die to disperse the solid powder in the molding material, and an embedding step of pressing and embedding the component into the agitated mixture of the molding material and the solid powder while vibrating at least one of the component and the molding die.

Method of manufacturing molded article including component insert-molded in resin mixed with solid powder

A reactor which may be employed in an inverter for automotive vehicles. The reactor includes a coil, a core, a casing, and a positioning member. The core is made of a solidified magnetic powder/resin mixture and has the coil embedded therein. The positioning member is disposed in the casing to position the coil relative to the casing and equipped with fins configured to stir the magnetic powder/resin mixture before solidified. Specifically, the positioning member is designed to perform two functions: one is to fix the location of the coil within the casing, and the other is to stir the magnetic powder/resin mixture through the fins, thus eliminating the need for removing a portion of the magnetic powder/resin mixture adhered to the fins, which leads to improved productivity of the reactor.

Growing community of inventors

Chiryu, Japan

Bahman Hossini Soltani