Amkor Technology, Inc.

Other

Skhynix Inc.

Kim, Bae Yong

Bae Yong Kim

Dong Hee Lee

Jin Woo Park

Dong In Kim

Min Kyun Yoo

Dae Byoung Kang

Kwang Sun Oh

Sung Su Park

Ji Yeon Roh

Jai Soon Myung

Provided is a composite containing bio-active material stably combined with a rare-earth hydroxide compound having a layered structure. The bio-active materials in the composite are preserved in terms of long-term stability at high temperature of 50&#xb0; C. or above and the composite maintained in the neutral pH condition to minimize side effects like latent toxicity, irritations, etc. Further, the present invention is useful for a skin-whitening, anti-wrinkle, or anti-aging cosmetic composition containing the composite.

Bio-active material composite, preparing method thereof and cosmetic composition containing the same

A semiconductor device is disclosed that may include a first semiconductor die comprising a copper pillar, a second semiconductor die comprising a copper pillar, and a conductive bump connecting the copper pillar of the first semiconductor die to the copper pillar of the second semiconductor die. The first semiconductor die may comprise a metal dam formed between the copper pillar and a bond pad on the first semiconductor die. The conductive bump may have a melting point lower than melting points of the copper pillar of the first semiconductor die and the copper pillar of the second semiconductor die. The first semiconductor die may be coupled to a substrate with a conductive wire coupled to the bond pad and to the substrate. The first semiconductor die may comprise a redistribution layer formed beneath the copper pillar on the first semiconductor die.

Semiconductor device with metal dam and fabricating method

A semiconductor device includes a chip body having an uneven surface including at least two regions at different levels from one another, a through electrode penetrating the chip body and having an end which is exposed by the uneven surface of the chip body, a passivation layer disposed on the uneven surface of the chip body, and a bump disposed on the passivation layer and the exposed end of the through electrode and overlapping with the uneven surface of the chip body.

Semiconductor devices having through electrodes, methods of fabricating the same, electronic systems including the same, and memory cards including same

A semiconductor device has a first semiconductor die having at least one metal pillar formed along an inner perimeter and at least one bond pad formed along an outer perimeter. A second semiconductor die has at least one metal pillar. A conductive bump connects the at least one metal pillar of the first semiconductor die to the at least one metal pillar of the second semiconductor die. At least one metal dam is formed on the first semiconductor die between the at least one metal pillar of the first semiconductor die and the at least one bond pad.

A semiconductor device has a semiconductor die having a first surface and a second surface wherein at least one bond pad is formed on the first surface. A passivation layer is formed on the first surface of the semiconductor device, wherein a central area of the at least one bond is exposed. A seed layer is formed on exposed portions of the bond pad and the passivation layer. A conductive pillar is formed on the seed layer. The conductive pillar has a base portion wherein the base portion has a diameter smaller than the seed layer and a stress relief portion extending from a lateral surface of a lower section of the base portion toward distal ends of the seed layer. A solder layer is formed on the conductive pillar.

Growing community of inventors

Jeollanam-do, South Korea

Bae Yong Kim