Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Eclypia

Alcatel Lucent

Stmicroelectronics (rousset) Sas

Badhise Ben Bakir

Jean-Marc Fedeli

Sylvie Menezo

Sébastien Cremer

Gilles Le Blevennec

Alain Chantre

Karim Hassan

Alexei Tchelnokov

Thomas Ferrotti

Christophe Kopp

Corrado Sciancalepore

Stéphane Bernabe

Nicolas Olivier

Adrien Gasse

Dominique Noguet

Guang-Hua Duan

Jean-Guillaume Coutard

Christophe Constancias

Hélène Duprez

Antoine Descos

Eirini Sarelli

Sébastien Barnola

Alban Le Liepvre

Rolf Aidam

Marco Lamponi

Guilhem De Valicourt

Cecile Delacour

Kevin Jourde

Olivier Lartigue

Amade Ndiaye

Cécile Delacour

An optoelectronic light emitting device includes a light emitting diode configured to emit a first radiation, a conversion layer including at least one planar quantum well configured to convert the first radiation into a second radiation, by photoluminescence, a grating for extracting the second radiation being etched on an upper face of the layer, and a lateral reflector having a reflective surface which extends facing part at least of a lateral surface of the conversion layer.

Light emitting device, pixel comprising several such devices, matrix of pixels and associated manufacturing methods

A light Emitting Diode includes a lower layer, an upper layer and between them an emissive structure suitable to emit a light radiation when an electric current passes through it. The upper layer is delimited by an upper surface, through which a portion at least of the light radiation exits. The lower layer is delimited by a lower surface for injecting electric charges. The upper surface forms a non-planar three-dimensional structure with hollow patterns and is covered by a contact structure made of one or several electrically-conductive materials, which extends against the surface, conforming to this non-planar surface.

Light-emitting diode with three-dimensional contact structure, display screen and associated manufacturing method

A photoacoustic detecting device comprises a housing which houses: a lighting module, a photoacoustic cell, comprising an surface contact intended to be placed in contact with the medium to analyse, a photoacoustic cavity extending from the surface contact to a top of the photoacoustic cell, at least one window closing the top of the photoacoustic cell or the contact surface of the photoacoustic cell, at least one subwavelength pattern located on a surface of said window, said subwavelength pattern being configured to focus the light beam on an surface of interest of the medium to analyse, a sensor, linked to the cavity, the sensor being configured to detect a generated signal, said generated signal being generated in the photoacoustic cavity by a photothermic effect in the medium, and wherein the photoacoustic cell, the window and the subwavelength pattern are formed on a single silicon wafer.

Photoacoustic detecting device

The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layerof an active layerand of an extraction layerIt comprises a step of determining a distance hbetween emitting dipoles &#x3bc;that are located in the active layerand the extraction layersuch that the emitting dipoles &#x3bc;of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

Method for producing an extraction-layer light-emitting diode comprising a step of dimensioning a semiconductor layer

An optoelectronic device includes a LED that is suited to the emission of a radiation and that includes an active layer, and a conversion layer that extends over the active layer of the LED and that includes a plurality of fluorophores suited to the conversion of the radiation emitted by the LED, wherein the conversion layer is confined laterally by a mirror reflecting both the radiation converted by the fluorophores and the radiation not converted by the fluorophores, and vertically between a first and a second multilayer reflective filters forming a resonant Fabry-Perot cavity that blocks the radiation not converted by the fluorophores and has a transmittance peak for the radiation converted by the fluorophores.

Light emitting diode, pixel comprising a plurality of light emitting diodes and associated manufacturing methods

The invention relates to a method for producing a light-emitting diode, comprising a stack formed of a first semiconductor layerand of an active layera reflective electrodeextending in contact with the first semiconductor layercomprising a step of determining a distance between emitting dipoles that are located in the active layerand the reflective electrodefor which a lifetime of the emitting dipoles having a chosen orientation is longer than that of the emitting dipoles having the non-chosen orientation.

Method for producing a light-emitting diode comprising a step of dimensioning a semiconductor layer

The invention relates to a III-V heterostructure laser device () arranged in and/or on silicon, comprising: The optical rib waveguide () is oriented so that at least one Bragg grating () is arranged on that side () of the slab waveguide () which is proximal relative to the gain medium () and in that the rib () is placed on that side () of the slab waveguide () that is distal relative to the gain medium ().

Laser device and process for fabricating such a laser device

A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.

Prestructured substrate for the production of photonic components, associated photonic circuit and manufacturing method

A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.

Method for adjusting properties of a photonic circuit by post fabrication ion implantation, and adjusted waveguide and photonic circuit

This slow light waveguide includes an initial region which extends, along an optical axis, from a start starting from which the width of a central waveguide begins to continuously decrease up to an end beyond which the width of the central waveguide no longer decreases up to the end of a slowing section, this initial region overlapping a broadening region where the length of lateral teeth continuously increases, a final region which extends, along the optical axis, from a start starting from which the width of the central waveguide begins to continuously increase up to an end beyond which the width of the central waveguide no longer increases, this final region overlapping a narrowing region where the length of the lateral teeth continuously decreases.

Slow light waveguide

A coupler/splitter including two neighboring coplanar waveguide portions extending in a same direction, the first portion having a constant cross-section, the second portion having a variable cross-section so that the effective index of the second waveguide portion varies, in the upstream-to-downstream direction, from a first lower value to a second value higher than the effective index of the first portion, in adiabatic coupling conditions.

Polarization splitting optical coupler having an interposed guide segment extending between first and second coplanar waveguides

The laser device includes an amplifier including a III-V heterostructure arranged to generate photons, and a waveguide which forms a loop and is optically coupled to the amplifier. The amplifier is arranged facing the waveguide only in the region of a first section of the waveguide.

Laser device having a looped cavity capable of being functionalized

The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.

Device for coupling an electromagnetic wave between a waveguide and a slit metal guide, method for manufacturing such a device, and optical and electric coupler for an object using the optical coupling device

Growing community of inventors

Brezins, France

Badhise Ben Bakir