Centre National De La Recherche Scientifique

Universitè De Montpellier

Universitat De Valéncia

Daegu Gyeongbuk Institute of Science and Technology

Ecole Nationale Superieure De Chimie De Montpellier

Azzedine Bousseksou

Laurent Malaquin

CheolGi Kim

Jean-Francois Letard

Christian Bergaud

Christophe Vieu

Quang Hung Tran

Saioa Cobo

Lionel Salmon

Jean-Pierre Tuchagues

Kun Woo Kim

Jerôme Menegotto

Philippe Demont

José Antonio Real Cabezos

Gabor Molnar

Philippe Gandit

Souleyman Kamara

Férial Terki

Quang-Hung Tran

Lionel Rechignat

Carlos Quintero

Karl Ridier

Gautier Felix

Souleymane Kamara

M Cheolgi Kim

Cheolgi Kim

Jérôme Menegotto

Jean-François Bât I12G1 Letard

A micromagnetometry system for detecting the presence of very small quantities of magnetic particles comprises a first magnetic hybrid AMR/PHR multiring sensor using a Wheastone bridge electrical configuration, a first current source, a first voltage measurement device, a set of at least one magnetic particles deposited on the first magnetic sensor and a processing unit for detecting from a set of different measured differential voltages a magnetic flux shift representative of the presence of a least one deposited magnetic particle. The micromagnetometry system comprises means for creating a magnetic excitation field Hto make produce by each motionless magnetic particle a stray magnetic field oscillating along the time at a constant frequency &#x3c9; ranging from 10 Hz to 3 KHz.

Micromagnetometry detection system and method for detecting magnetic signatures of magnetic materials

This application relates to a process for the application of thin layers of substantially pure spin transition molecular materials while maintaining the hysteresis properties of the material. The process makes it possible to obtain a dense uniform surface with very low roughness.

Process for the application of spin transition molecular materials in thin layers

A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.

Molecular memory and method for making same

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Toulouse, France

Azzedine Bousseksou