Toshiba Matsushita Display Technology Co., Ltd.

Azusa Ikeda

Yasushi Kawata

Akio Murayama

Masaki Obi

Hideki Ito

A thin film transistor layer including a thin film transistor is formed at a liquid crystal layer side of a color filter layer on an array substrate. Since it becomes possible to form the color filter layer at a position on a relatively flat glass substrate, satisfactory characteristics of the color filter layer can be obtained. The color filter layer is unlikely to have influence on the thin film transistor layer, so that the yield can be improved.

Display element

Electrode slit portions are formed in a pixel electrode in a direction of crossing a slit for dividing a liquid crystal layer into a plurality of domains. A titanium oxide film is formed so as to be exposed to the liquid crystal layer side via the electrode slit portions, the titanium oxide film having a relative dielectric constant higher than that of an organic film formed at positions corresponding to the electrode slit portions. By the titanium oxide film, an electric field of each domain is set, angles between the director in the vicinity of the electrode slit portion and transmission axes of polarizing plates are made to approximately 45&#xb0;, and a decrease in transmittance caused by the falling direction of the director can be suppressed. The transmittance and contrast ratio are secured, and simultaneously an excellent wide viewing angle range can be obtained.

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Fukaya, Japan

Azusa Ikeda