Zecotek Imaging Systems Pte. Ltd.

Zecotek Photonics Inc.

Sadygov, Ziraddin Yagub-ogly

Sadygov, Azar

Azar Sadygov

Abdelmounaime Faouzi Zerrouk

Azman Mohd Ariffin

Ziraddin Yegub-Ogly Sadygov

Ziraddin Yagub-Ogly Sadygov

Serge Khorev

The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

Photodetector array and method of manufacture

Semiconductor avalanche photo transistors and methods of manufacturing the same, operable for internal amplification of a photo signal and for use in detection of weak light signals, gamma rays and nuclear particles. The multi-pixel avalanche photo transistor devices can comprise a semiconductor layer, a plurality of semiconductor areas (pixels) forming a p-n-junction with the semiconductor layer, a common conductive grid separated from the semiconductor layer by a dielectric layer and individual micro-resistors connected to said semiconductor areas with the common conductive grid. Systems and methods described can be operable to decrease optical crosstalk at high signal amplification and the special capacity of the multi-pixel avalanche photo transistor, as well as improve speed of its photo response.

Multi-pixel avalanche transistor

Growing community of inventors

Baku, Azerbaijan

Azar Sadygov