Georgia Tech Research Corporation

University of California

The University of Texas System

Imec Vzw

Board of Regents of the University of Nebraska

Indiana University

Katholieke Universiteit Leuven

Azad Naeemi

Sourav Dutta

Chenyun Pan

Andrew Marshall

Francky Catthoor

Peter A Dowben

Odysseas Zografos

Alpha T N'Diaye

Aaron Mosey

Ruihua Cheng

Andrew J Yost

Xuanyuan Jiang

Thilini K Ekanayaka

Guanhua Hao

Xiaoshan Xu

A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 10A/cm), a device on/off ratio >10, thin film quality, the ability to 'lock' the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 Ω·cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 10switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.

Thin film molecular memory

An anti-ferromagnetic (AFM) voltage-controlled field effect logic device structure can include an AFM material that extends in a first direction and an input voltage terminal that extends opposite the AFM material. An oxide material can be located between the AFM material and the input voltage terminal. A first spin orbital coupling (SOC) material can extend in a second direction across the AFM material to provide a first SOC channel with a drain voltage terminal at a first end of the first SOC channel and an output voltage terminal at a second end of the first SOC channel that is opposite the first end. A contact can be electrically coupled to the output voltage terminal and configured to electrically couple to a second SOC material extending in the second direction spaced apart from the first SOC material to provide a second SOC channel.

Antiferromagnet field-effect based logic circuits including spin orbital coupling channels with opposing preferred current paths and related structures

A plasmonic device comprising an odd number of at least three input waveguides and at least one output waveguide is disclosed. In one aspect, the waveguides are adapted for guiding a surface plasmon polariton wave and the input waveguides are connected to the output waveguide at a waveguide junction. The inserted SPP waves have a phase at the waveguide junction which is either a first phase or a second phase. The second phase is shifted over &#x3c0; with regard to the first phase and a combined SPP wave at the waveguide junction has a resulting phase wherein the dimensions of the waveguides are such that for different combinations of phases of the inserted waves the combined waves are phase aligned.

Plasmonic devices and circuits

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes and prevents the racing condition.

Magnetoelectric computational devices

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes, and prevents the racing condition.

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Atlanta, GA, United States of America

Azad Naeemi