Canon Kabushiki Kaisha

Joled Inc.

Toppan Inc.

Tomoegawa Co., Ltd.

Ayumu Sato

Ryo Hayashi

Hisato Yabuta

Hideya Kumomi

Tomohiro Watanabe

Takahide Ishii

Masafumi Sano

Takashi Maruyama

Yasuyoshi Takai

Norihiro Arai

Yasuhiro Terai

Masahide Sugiyama

Hiroto Katagiri

Masao Kato

Shinichi Ushikura

Kunpei Kobayashi

Kazuhiko Oosawa

An optical member including a polarizing plate having an absorption axis and a transmission axis which are orthogonal to each other, a reflective polarizing plate having a reflection axis and a transmission axis which are orthogonal to each other, and an optical anisotropic diffusion layer which is provided between the polarizing plate and the reflective polarizing plate and whose linear transmittance varies according to an incident light angle.

Optical member and liquid crystal display device

A liquid crystal display device includes: a liquid crystal layer interposed between first and second substrates and set in vertical alignment (VA); a switching element provided on the first substrate; a connection electrode connected to the switching element; a first reflection film provided above the switching element; a first pixel electrode provided above the first reflection film and overlapping the first reflection film; a second pixel electrode located adjacent to the first pixel electrode; first and second contacts which connect the first and second pixel electrodes to the connection electrode; a first thickness adjusting layer provided on the second substrate and overlapping the first reflection film; a common electrode provided on the second substrate and the first thickness adjusting layer; and first and second protrusions provided on the common electrode and corresponding to the first and second pixel electrodes.

Liquid crystal display device

According to one embodiment, a semiconductor device includes an insulating substrate, an oxide semiconductor layer, a gate insulating film, a gate electrode, a first insulating film and a second insulating film. The oxide semiconductor layer is provided on the insulating substrate and includes first and second low-resistance regions and a high-resistance region between the first and second low-resistance regions. The gate insulating film is provided on the high-resistance region of the oxide semiconductor layer. The gate electrode is provided on the gate insulating film. The first insulating film is provided above the gate electrode, gate insulating film and first and second low-resistance regions of the oxide semiconductor layer, and contains at least fluorine. The second insulating film is provided on the first insulating film, and contains aluminum.

Semiconductor device and method of producing the same

A display device of the present disclosure includes a plurality of pixels, in which a pixel includes a light-emitting element, a drive circuit which has a thin film transistor driving the light-emitting element, and a coupling unit which connects the light-emitting element and the drive circuit to each other, the light-emitting element has a configuration in which an organic layer including a light-emitting layer is interposed between a transparent electrode and a reflective electrode, the thin film transistor has a configuration which includes a semiconductor layer, an insulation layer, a first electrode layer, and a second electrode layer, and the coupling unit includes a metal layer which is thinner than the first electrode and the second electrode of the thin film transistor the metal layer being disposed in one portion of the coupling unit.

Display device and electronic apparatus with thin connection between driving TFT and light emitting element

Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film.

Semiconductor device, display unit, and electronic apparatus

Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.

Top gate thin film transistor and display apparatus including the same

Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4&#xd7;10atoms/cmor less, and the third insulating layer having a hydrogen content of more than 4&#xd7;10atoms/cm.

Oxide semiconductor device including insulating layer and display apparatus using the same

Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

Thin film transistor and method of manufacturing the same

To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.

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Tokyo, Japan

Ayumu Sato