Mitsubishi Denki Kabushiki Kaisha

Ayumi Minamide

Takayuki Saito

Nobuyuki Yoshioka

Atsushi Hachisuka

Takeo Ishibashi

Koji Taniguchi

Yuki Miyamoto

Shinya Soeda

Koichiro Narimatsu

Shigenori Yamashita

Toshiyuki Toyoshima

Keiichi Katayama

A resist pattern, containing a material capable of generating an acid by exposure to light, is covered with a resist containing a material capable of crosslinkage in the presence of an acid. The acid is generated in the resist pattern by application of heat or by exposure to light, and a crosslinked layer is formed at the interface as a cover layer for the resist pattern, thereby causing the resist pattern to be thickened. Thus, the hole diameter of the resist pattern can be reduced, or the isolation width of a resist pattern can be reduced.

Material for forming a fine pattern and method for manufacturing a semiconductor device using the same

The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

Registration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photo mask and method of exposure thereof

An improved method of forming a resist pattern permitting control of a resist profile of a chemically amplified-type resist is provided. A chemically amplified-type resist is exposed to light using a mask. The resist is then baked by PEB at a first temperature, and developed halfway. The resist is baked again at a second temperature lower than the first temperature, and then fully developed. A resist pattern is thus obtained.

Resist pattern forming method utilizing multiple baking and partial development steps

Registration accuracy measurement mark, method of repairing defect of

Registration accuracy measurement mark

A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.

Semiconductor device and method for manufacturing the same

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Hyogo, Japan

Ayumi Minamide