Mitsubishi Electric Corporation

Ayumi Fuchida

Naoki Nakamura

Go Sakaino

Tetsuya Uetsuji

Yuichiro Okunuki

Naoki Kosaka

Masato Suzuki

Masaaki Shimada

Hiroaki Maehara

Tadashi Takase

A semiconductor laser device disclosed in this application is characterized; wherein one of the reflective surface and the secondary reflective surface is constituted by a dielectric multi-layer film that is formed on a PD chip for measuring a light quantity of the laser light; and wherein an inclination angle of the reflective surface is set to a value obtained by subtraction of a value that is less than an inclination angle of beam center, from 45 degrees, while an inclination angle of the secondary reflective surface is set to a value obtained by subtraction of a value that is more than the inclination angle of beam center, from 45 degrees.

Semiconductor laser device

There is provided a configuration which includes: a burying layer which has a current narrowing window where portions protruding onto a top part of a ridge stripe are opposed to each other with an interval therebetween narrower than a width of the top part; and a diffraction grating in which a λ/4 phase shifter is placed at an intermediate portion in a light traveling direction; wherein a sectional shape of the current narrowing window varies depending on a position in the light traveling direction so that, at a region where the λ/4 phase shifter is placed, a resistance of a current path from a second cladding layer to a first cladding layer through the current narrowing window is minimum.

Optical semiconductor device and method of manufacturing optical semiconductor device

A semiconductor optical element has a mesa structure in which an active layer is embedded, and comprises a straight propagating section and a spot size converter section being such that a light confinement in the active layer is weaker than that of the straight propagating section, wherein in a same plane parallel to a layer surface of the active layer, an average value of a width of the mesa structure of the straight propagating section is smaller than a value of the width of the mesa structure at the emission facet of the spot size converter section, and at a top part of the mesa structure, an electrode is formed so that an electric current is injected in the active layer across the entire length of the straight propagating section and the spot size converter section.

Semiconductor optical element

In a semiconductor chip manufacturing device which produces a plurality of LD chips by dividing a semiconductor wafer, being placed in a casing in which a fluid medium is filled, on which a block line is formed in advance and also on which a scribed line is inscribed so that a microcrack is formed along the scribed line, the semiconductor chip manufacturing device comprises a reception stage for supporting the semiconductor wafer, and a blade cutting-edge for pressurizing the semiconductor wafer along its crack portion made of the block line or the scribed line, so that the semiconductor wafer is divided into a plurality of LD chips by pressurizing it by means of the blade cutting-edge along the crack portion in the fluid medium.

Semiconductor chip manufacturing device and method of manufacturing semiconductor chips

A semiconductor laser device comprises a stem serving as a base; a laser diode LD submount having surface electrodes arranged thereon and joined to the surface of the stem; an LD chip joined to the surface electrode and connected with the surface electrode; and leads fixed in through holes formed in the stem by means of sealing parts and electrically connected to the surface electrodes via embedded layers in via holes formed in the LD submount, wherein grooves are formed in portions of the sealing parts or in portions of the LD submount around the connections between the leads and the embedded layers, to obtain a good modulated light waveform.

What is provided are: an active-layer ridge which is composed of an n-type cladding layer, an active layer, a first p-type cladding layer and a second n-type blocking layer that are stacked in this order on an n-type InP substrate, and which is formed to project from a position lower than the active layer; burying layers by which both side portions of the active-layer ridge are buried up to a position higher than the active layer; first n-type blocking layers which are each stacked on a front-surface side of each of the burying layers, to be placed on the both sides of the ridge; and a second p-type cladding layer by which an end portion of the active-layer ridge and the first n-type blocking layers are buried thereunder; wherein a current narrowing window for allowing a hole current to pass therethrough is provided in and at a center of the second n-type blocking layer placed at a top of the active-layer ridge.

Semiconductor laser and method for manufacturing same

A semiconductor optical device is provided with a semiconductor substrate that has a length and width, a laser section that is provided on the semiconductor substrate and includes an active layer and an optical waveguide section that is provided adjacent to the laser section on the semiconductor substrate and is joined to the laser section. The optical waveguide section includes a core layer that is connected to an end portion of the active layer, and a pair of cladding layers between which the core layer is sandwiched and emits, from an emission end surface, light incident from the joining interface between the optical waveguide section and the laser section. The semiconductor optical device may be also provided with a reflection suppression layer that is provided on the upper surface of the optical waveguide section.

Semiconductor optical device

A semiconductor laser device includes a semiconductor substrate, a resonator unit formed on the semiconductor substrate and having an active layer, a diffraction grating formed on or underneath the active layer, a front facet of an inverted mesa slope, and a rear facet, an anti-reflection coating film formed on the front facet, a reflective film formed on the rear facet, an upper electrode formed on the resonator unit, and a lower electrode formed underneath the semiconductor substrate, wherein a length in a resonator direction of the resonator unit is shorter than a length in the resonator direction of the semiconductor substrate, and a laser beam is emitted from the front facet.

Semiconductor laser device and method for manufacturing semiconductor laser device

An edge-emitting semiconductor laser includes: a semiconductor substrate; a first cladding layer having a first refractive index and formed on the semiconductor substrate; an active layer formed on the first cladding layer and having a second refractive index higher than the first refractive index; a Bragg reflector formed on the active layer and in which low-refractive-index layers and high-refractive-index layers each having a thickness larger than &#x3bb;/4n are alternately laid one on another where &#x3bb; is an lasing wavelength and n is a refractive index of a medium; a light absorption layer formed on the Bragg reflector and having bandgap energy lower than that of the active layer; and a second cladding layer formed on the light absorption layer and having a third refractive index lower than the second refractive index.

Edge-emitting semiconductor laser

A semiconductor optical element has a semiconductor substrate, a diffraction grating, a diffraction grating embedding layer, an active layer and a cladding layer. The diffraction grating includes a plurality of grating elements arranged on the semiconductor substrate along a direction (Z direction) in which laser light is emitted. Each grating element has a lower portion and an upper portion provided on the lower portion. The lower portions of the grating elements are connected to each other to form one layer in a lower section of the diffraction grating. The upper portion has a first refractive index and the lower portion has a second refractive index. A refractive index of the diffraction grating embedding layer is an intermediate value between the first and the second refractive index.

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Tokyo, Japan

Ayumi Fuchida