Array Photonics, Inc.

Aymeric Maros

Ferran Suarez

Ting Liu

Sabeur Siala

Radek Roucka

Ding Ding

Arsen Sukiasyan

Jordan Lang

Michael Sheldon

Evan Pickett

Ivan Hernandez

Jacob Thorp

Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 &#x3bc;m.

Short wavelength infrared optoelectronic devices having a dilute nitride layer

Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.

Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

Hydrogen diffusion barrier for hybrid semiconductor growth

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells

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San Francisco, CA, United States of America

Aymeric Maros