Synopsys, Inc.

Ayhan Mutlu

Jiayong Le

Peivand Tehrani

Mustafa Celik

Duc Huynh

Guy Maor

A system receives a circuit description and measures of intrinsic delay, intrinsic delay variation, transition time and transition time variation for each stage and determines stage delay variation of each stage. The system receives a circuit description and derate factors and determines an intrinsic delay standard deviation and a correlation coefficient. The system determines a stage delay variation of each stage based on the determined factors. The system receives parameters describing an asymmetric distribution of delay values and generates a normal distribution of delay values. The system receives measures of nominal transition time at an output and input of a wire, and transition time variation at the input of the wire and determines a transition time variation at the output of the wire. The system receives measures of an Elmore delay and a nominal delay of the wire and determines a delay variation at the output of the wire.

Analyzing delay variations and transition time variations for electronic circuits

The invention provides a method for performing statistical static timing analysis using a novel on-chip variation model, referred to as Sensitivity-based Complex Statistical On-Chip Variation (SCS-OCV). SCS-OCV introduces complex variation concept to resolve the blocking technical issue of combining local random variations, enabling accurate calculation of statistical variations with correlations, such as common-path pessimism removal (CPPR). SCS-OCV proposes practical statistical min/max operations for random variations that can guarantee pessimism at nominal and targeted N-sigma corner, and extends the method to handle complex variations, enabling graph-based full arrival/required time propagation under variable compaction. SCS-OCV provides a statistical corner evaluation method for complex random variables that can transform vector-based parametric timing information to the single-value corner-based timing report, and based on the method derives equations to bridge POCV/SSTA with LOCV. This significantly reduces the learning curve and increases the usage of the technology, being more easily adopted by the industry.

Statistical corner evaluation for complex on-chip variation model

Statistical corner evaluation for complex on chip variation model

Sensitivity-based complex statistical modeling for random on-chip variation

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Santa Clara, CA, United States of America

Ayhan Mutlu