Auburn University

Rutgers, The State University of New Jersey

Ayayi Claude Ahyi

John Robert Williams

Leonard C Feldman

Tamara F Isaacs-Smith

Yogesh K Sharma

Chin-Che Tin

Bakhtiyar Gafurovich Atabaev

Tojiddin Mutalovich Saliev

Erkin Nurovich Bakhranov

Mingyu Li

Adetayo Victor Adedeji

Balapuwaduge Suwan Pathum Mendis

Ilkham Gafurovich Atabayev

Illustrative embodiments of semiconductor devices including a polar insulation layer capped by a non-polar insulation layer, and methods of fabrication of such semiconductor devices, are disclosed. In at least one illustrative embodiment, a semiconductor device may comprise a semiconductor substrate, a polar insulation layer disposed on the semiconductor substrate and comprising a Group V element configured to increase a carrier mobility in at least a portion of the semiconductor substrate, and a non-polar insulation layer disposed above the polar insulation layer.

Semiconductor devices including polar insulation layer capped by non-polar insulation layer

The method described herein enables the introduction of external impurities into Silicon Carbide (SiC) to be conducted at a temperature between 1150-1400&#xb0; C. Advantages include: a) low temperature diffusion procedure with greater control of the doping process, b) prevent roughness of SiC surface, c) less surface defects and d) better device performance and higher yield. The method described herein involves depositing a ceramic layer that contains the desired impurity and a certain element such as oxygen (in the form of oxide), or other elements/compounds that draw out the silicon and carbon atoms from the surface region of the SiC leaving behind carbon and silicon vacancies which then allow the external impurity to diffuse into the SiC more easily. In another embodiment, the deposited layer also has carbon atoms that discourage carbon from escaping from the SiC, thus generating a surface region of excess carbon in addition to the silicon vacancies.

Low temperature impurity doping of silicon carbide

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Auburn, AL, United States of America

Ayayi Claude Ahyi