Tokyo Electron Limited

Ayano Hagiwara

Nobuhiro Takahashi

Yasuo Asada

Tatsuya Yamaguchi

Takehiko Orii

Shinji Irie

Jun Lin

Koji Takeya

Junichiro Matsunaga

Masashi Matsumoto

Kenji Tanouchi

Kakeru Wada

An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.

Etching method and apparatus

There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an Fgas and the second fluorine-containing gas including at least a ClFgas, an IFgas, an IFgas or an SFgas.

Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film

There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

Etching method and etching apparatus

An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of Fgas and NHgas in an etching gas that has a gas system including the Fgas and the NHgas.

Etching method and storage medium

Growing community of inventors

Nirasaki, Japan

Ayano Hagiwara