Seiko Instruments Inc

Ayako Inoue

Kazuhiro Tsumura

Naoto Saitoh

Jun Osanai

Akihiro Iino

Takayuki Satodate

Yoshitsugu Hirose

Tetsuya Nobe

A non-volatile semiconductor memory device has a semiconductor substrate, an element isolation region disposed in a surface of the semiconductor substrate, a well region disposed along one principal surface of the semiconductor substrate, source and drain regions arranged in the well region, a gate oxide film arranged on the surface of the semiconductor substrate between the source region and the drain region, a floating gate disposed on the gate oxide film, and an insulating film disposed on a surface of the floating gate. A control gate is capacitively coupled to the floating gate disposed through intermediation of the insulating film. A resistive element is serially connected to the control gate. Write characteristics of the non-volatile semiconductor memory device are improved as a result of a delay effect of the resistive element serially connected to the control gate.

Non-volatile semiconductor memory device

Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor is formed on an element isolation region, both formed of the same polysilicon film. By CMP or etch-back, the surface is ground down while planarizing the surface until a resistor has a desired thickness. Owing to a difference in height between the active region and the element isolation region, a thin resistor and a thick upper electrode of the capacitor are formed to prevent passing through of a contact.

Semiconductor device and method of manufacturing the same

Provided is a memory circuit in which erroneous writing is less likely to occur at the time of power-on. A memory circuit () includes: a P-channel non-volatile memory element () for writing, to which a voltage is applied between a source and a drain thereof only during writing so as to write data; and an N-channel non-volatile memory element () for reading, which has a control gate and a floating gate provided in common to a control gate and a floating gate of the P-channel non-volatile memory element () and to which a voltage is applied to a source and a drain thereof only during reading so as to read the data.

Memory circuit

Provided is a semiconductor capacitor including: a capacitor device forming region having a trapezoidal trench which is formed on a surface of a first conductivity type semiconductor substrate; a second conductivity type lower electrode layer provided along the trapezoidal trenches of the capacitor device forming region; a capacitor insulating film formed at least on a surface of the second conductivity type lower electrode layer; and a second conductivity type upper electrode formed on a surface of the capacitor insulating film.

Semiconductor device having trapezoidal shaped trenches

In a method of manufacturing a high withstanding voltage MOSFET, a region to be doped with impurities and a region to be doped with no impurity are provided when ion implantation of the impurities is performed in the channel forming region, for controlling a threshold voltage. The region to be doped with no impurity is suitably patterned so that impurity concentration of the channel forming region near boundaries between a well region and a source region and between the well region and a drain region having the same conductivity type as the well region may be increased, to thereby induce a reverse short channel effect. By canceling a short channel effect with the reverse short channel effect induced by the above-mentioned method, the short channel effect of the high withstanding voltage MOSFET may be suppressed.

An electric motor has a rotor having an end portion and a recessed portion formed at the end portion. A rotational shaft is mounted to the rotor. A stator covers an outer peripheral portion of the rotor and forms a magnetic field that generates a torque around the rotational shaft to thereby rotate the rotational shaft and the rotor. A bearing rotatably supports the rotational shaft and is entirely spaced-apart from the end portion of the rotor in an axial direction of the rotational shaft. A slider is slidably mounted around the rotational shaft and supports rotation of the rotational shaft about a rotational axis thereof. The slider is interposed between the bearing and the rotor so that a portion of the slider is entirely contained in the recessed portion of the rotor and the remaining portion of the slider is disposed in the space between the bearing and the rotor and in contact with the bearing.

Growing community of inventors

Chiba, Japan

Ayako Inoue