Sumitomo Electric Industries, Limited

Ayako Ikeda

Youichi Nagai

Takao Nakamura

Katsushi Akita

Koji Uematsu

Makoto Kiyama

Koji Katayama

Takashi Sakurada

Susumu Yoshimoto

Hiroyuki Kitabayashi

Hirohisa Saito

In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 &#x3a9;&#xb7;cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

Light emitting apparatus

A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlGaN layer, a p-type AlGaN layer positioned further than the n-type AlGaN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlGaN layer and the p-type AlGaN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 &#x3a9;&#xb7;cm, the side of p-type AlGaN layer is mounted face-down, and the light is emitted from the second main surfacethat is opposite to the first main surface of the nitride semiconductor substrate. The second main surfaceof nitride semiconductor substrate has trenches formed therein.

Light emitting device

A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 &#x3a9;&#xb7;cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.

Growing community of inventors

Itami, Japan

Ayako Ikeda