Toshiba Memory Corporation

Kioxia Corporation

Ayaha Hachisuga

Jun Nishimura

Hisashi Harada

Hiroshi Nakaki

Daigo Ichinose

Ayako Kawanishi

Keisuke Suda

Yu Hirotsu

Shunsuke Kasashima

Takamitsu Ochi

Yukie Miyazaki

Takayuki Hashimoto

According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction orthogonal to a stacking direction of a stacked body and the stacking direction, and reaches a position deeper than an upper surface of the first conductive layer. The first structure has a first width at a bottom of the stacked body, and a second width narrower than the first width, in a first depth region from a position of the upper surface of the first conductive layer to a first depth position. A third conductive layer is connected to a side surface of the first conductive layer in the first depth region in a second direction orthogonal to the stacking direction and the first direction.

Semiconductor memory device

A semiconductor memory device comprises a substrate, first semiconductor films extending in a first direction crossing a surface of the substrate and arranged in a second direction and in a third direction, a conductive layer which covers peripheral faces of the first semiconductor films on a cross-section crossing the first direction, and a contact which extends in the first direction. Here, when straight lines disposed at equal intervals in the second direction on the cross-section and perpendicular to the second direction are defined as first to third straight lines, a first number of the first semiconductor films are provided on the first straight line, a second number less than the first number of the first semiconductor films are provided on the second straight line, a third number less than the second number of the first semiconductor films are provided on the third straight line.

Semiconductor memory device having a plurality of first semiconductor films

A semiconductor memory device according to an embodiment includes: a substrate; a plurality of first gate electrodes; a first semiconductor film facing the plurality of first gate electrodes; and a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film. Moreover, this semiconductor memory device includes: a plurality of second gate electrodes; a second semiconductor film facing the plurality of second gate electrodes; and a second gate insulating film provided between the plurality of second gate electrodes and the second semiconductor film. Moreover, this semiconductor memory device includes: a third gate electrode that is provided between the plurality of first gate electrodes and the plurality of second gate electrodes, and extends in a second direction; and a third gate insulating film provided between the third gate electrode and the first semiconductor film. Moreover, a thickness in a first direction of the third gate insulating film is larger than a width in the second direction of the first gate insulating film and the second gate insulating film.

Semiconductor memory device having vertical semiconductor films with narrowing widths and gate insulating films with different thickness

A semiconductor device includes a base body portion, a stacked body, a pedestal portion, a plate portion, and first and second columnar portions. The base body portion includes a doped semiconductor film and a semiconductor portion. The doped semiconductor film includes first and second portions. The semiconductor portion includes a first region overlapping the first portion, and a second region overlapping the second portion and being a body different from the first region. The pedestal portion is provided in the second region. The plate portion contacts the pedestal portion and the first region. The first columnar portion includes a semiconductor layer. The semiconductor layer is adjacent to the plate portion with the stacked body interposed, and contacts the first region. The second columnar portion is adjacent to the plate portion with the stacked body interposed, and is adjacent to the pedestal portion with the second region interposed.

Three-dimensional memory device

Growing community of inventors

Yokkaichi, Japan

Ayaha Hachisuga