Asahi Kasei Chemicals Corporation

Asahi Kasei E-materials Corporation

Asahi Kasei Kabushiki Kaisha

Aya Takagiwa

Jun Koike

Kazuya Noda

Fujito Yamaguchi

Yasukazu Shikano

Teruaki Sakuma

Provided is a surface-treated carbon nanotube having few surface fractures, not reducing the molecular weight of the resin to be mixed and having excellent extrudability. In the surface-treated carbon nanotube, the thermal reduction amount at 600&#xb0; C. in a nitrogen atmosphere is 0.2 to 40%, the surface oxygen concentration measured by X-ray photoelectron spectroscopy (XPS) is 1.5 to 40 atm % and the surface sulfur concentration is less than 0.1 atm %.

Surface-treated carbon nanotube and resin composition

A light extraction product () for a semiconductor light emitting device is provided with a concavo-convex structure layer (), provided with a concavo-convex structure () on a surface thereof, having a first refractive index (n1) and a light extraction layer (), provided on the convex portion of the concavo-convex structure (), having a second refractive index (n2), where in a first light extraction layer () a distance Lcv between an average position Sh of tops of the convex-portions and a convex-portion upper interface average position Scv of the first light extraction layer () meets equation (1) 10 nm&#x2266;Lcv&#x2266;5000 nm, in the concavo-convex structure () a convex-portion average height H meets equation (2) 10 nm&#x2266;H&#x2266;5000 nm, an average pitch P meets equation (3) 50 nm&#x2266;P&#x2266;5000 nm, and the distance Lcv and the convex-portion average height H meet equation (4) 50 nm&#x2266;Lcv+H&#x2266;6000 nm. It is possible to improve light extraction efficiency from the semiconductor light emitting device using the light extraction product (), and further to enhance long-term reliability of the semiconductor light emitting device.

Light extraction product for semiconductor light emitting device and light emitting device

Growing community of inventors

Tokyo, Japan

Aya Takagiwa