Asml Netherlands B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Axel Sebastiaan Lexmond

Leonard Ferdinand Gerard Geers

Sjoerd Nicolaas Lambertus Donders

Johannes Henricus Wilhelmus Jacobs

Franciscus Johannes Joseph Janssen

Tjarko Adriaan Rudolf Van Empel

Lun Kai Cheng

Earl Lawrence Vincent Goetheer

Carolus Ida Maria Antonius Spee

Adrianus Johannes Petrus Maria Vermeer

Marcel Johannus Elisabeth Hubertus Muitjens

Diederik Jan Maas

Cornelis Petrus Marcus Roelands

Evert Nieuwkoop

Roger Wilhelmus Antonius Henricus Schmitz

Frederik Van Der Graaf

Richard Versluis

Johannes Fransiscus Maria Velthuis

Paulus Bartholomeus Johannes Schaareman

Antonie Ellert Duisterwinkel

Bob Van Someren

Willem Arie Van Helden

Mathilde Gertrudis Maria De Kroon

Martinus Henricus Johannes Lemmen

Charles William Barras Potts

Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.

Apparatus and method for atomic layer deposition

The invention is directed to a method for carrying out a continuous physical or chemical process, in particular crystallization. The method of the invention comprises: comprising&#x2014;flowing a fluid through a channel comprising an inlet and an outlet for said fluid, wherein said channel is at least in part curved and comprises at least two curvatures,&#x2014;allowing said process to occur at least in part in said fluid in the presence of Dean vortices in said fluid, while&#x2014;reversing the direction of the flow of said fluid in said channel multiple times, wherein Dean vortices in the fluid in the channel are maintained while the flow is reversed.

Fluid flow continuous physical or chemical processes using dean vortices

A method for thermally conditioning an optical element includes irradiating the optical element with radiation, not-irradiating the optical element with the radiation, allowing heat flow between the optical element and a conditioning fluid that is held in a conditioning fluid reservoir, and providing a fluid flow of the conditioning fluid, to supply thermally conditioned fluid to the reservoir. A flow rate of the fluid during the irradiating of the optical element is lower than a flow rate of the fluid when the optical element is not-irradiated.

Method and system for thermally conditioning an optical element

A lithographic projection apparatus is disclosed that comprises a substrate table, a projection system, a liquid confinement structure and a thermal measurement system. The substrate table is configured to support a substrate. The projection system is configured to direct a patterned beam of radiation on to a target portion of the substrate. The liquid confinement structure is configured to at least partly confine an immersion liquid to a space between the projection system and the substrate, the substrate table, or both. The thermal measurement system comprises a thermally sensitive coating. The thermal measurement system is configured to detect the temperature of the immersion liquid in contact with the coating. Also disclosed is a thermal measurement system, a metrology system comprising the thermal measurement system and a dummy wafer for the thermal measurement system.

Lithographic apparatus, a metrology apparatus and a method of using the apparatus

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Voorschoten, Netherlands

Axel Sebastiaan Lexmond