Infineon Technologies Ag

Axel Koenig

Hans-Joachim Schulze

Werner Schustereder

Ralf Siemieniec

Caspar Leendertz

Moriz Jelinek

Paul Ellinghaus

The present disclosure relates to methods of manufacturing Ohmic contacts on a silicon carbide (SiC) substrate including providing a 4H—SiC or 6H—SiC substrate, implanting dopants into a surface region of the 4H—SiC or 6H—SiC substrate, annealing the implanted surface regions to form a 3C—SiC layer, and depositing a metal layer on the 3C—SiC layer. An implanting sequence of the implantation of dopants includes a plurality of plasma deposition acts with implantation energy levels including at least two different implantation energy levels. The implantation energy levels and one or more implantation doses of the plurality of plasma deposition acts are selected to form a 3C—SiC layer in the surface region of the 4H—SiC or 6H—SiC substrate during the annealing act. A method of manufacturing a semiconductor device having a structure including at least three layers including a 4H—SiC or 6H—SiC layer, a 3C—SiC layer, and a metal layer, by applying one or more of the techniques described herein, and semiconductor devices obtained with one or more of the techniques described herein are described.

Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device

A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a <0001> direction or a <11-23> direction.

Semiconductor device fabricated using channeling implant

Growing community of inventors

Villach, Austria

Axel Koenig