Intel Corporation

Avyaya Jayanthinarasimham

Brian Joseph Greene

Doug B Ingerly

Mohammad Enamul Kabir

Keith Zawadzki

Conor P Puls

Babita Dhayal

Hannes Greve

Han Li

Mukund Bapna

Rishabh Mehandru

Biswajeet Guha

Curtis Tsai

Kevin Fischer

Ayan Kar

Kalyan C Kolluru

Chung-Hsun Lin

Nicholas A Thomson

Suresh Vishwanath

Nathan Jack

Benjamin Orr

Rui Ma

Lin Hu

Sabih Omar

Moisture hermetic guard ring structures for semiconductor devices, related systems, and methods of fabrication are disclosed. Such devices systems, and methods include a guard ring structure laterally surrounding semiconductor devices of a device layer and metal interconnects of an interconnect layer, the guard ring structure extending through the interconnect layer, the device layer, and a bonding layer adjacent one of the interconnect layer or the device layer the bonding layer, and contacting a support substrate coupled to the bonding layer. Such devices systems, and methods may further include via structures having the same material system as the guard ring structure and also extending through the interconnect, the device, and bonding layers and contacting a support substrate.

Moisture hermetic guard ring for semiconductor on insulator devices

Substrate-free integrated circuit structures, and methods of fabricating substrate-free integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin, a plurality of gate structures over the fin, and a plurality of alternating P-type epitaxial structures and N-type epitaxial structures between adjacent ones of the plurality of gate structures.

Substrate-free integrated circuit structures

Substrate-less vertical diode integrated circuit structures, and methods of fabricating substrate-less vertical diode integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a semiconductor fin in a dielectric layer, the semiconductor fin having a top and a bottom, and the dielectric layer having a top surface and a bottom surface. A first epitaxial semiconductor structure is on the top of the semiconductor fin. A second epitaxial semiconductor structure is on the bottom of the semiconductor fin. A first conductive contact is on the first epitaxial semiconductor structure. A second conductive contact is on the second epitaxial semiconductor structure.

Substrate-less vertical diode integrated circuit structures

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Hillsboro, OR, United States of America

Avyaya Jayanthinarasimham