Trieye Ltd.

Other

Tower Semiconductor Ltd.

Avraham Bakal

Uriel Levy

Omer Kapach

Ariel Danan

Roni Dobrinsky

Nadav Melamud

Hillel Hillel

Vincent Immer

Eran Katzir

Dan Kuzmin

Edward J Preisler

Assaf Lahav

Yoni Prosper Shalibo

Roman Shklyar

Elior Dekel

Elad Ayalon

Stanislav Khatsevich

A system and method for utilizing SWIR sensing in automated cleaning machines including a first illumination source for emitting radiation at a first wavelength in the SWIR towards a FOV, a receiver operating in the SWIR to acquire SWIR image data based on radiation reflected from elements located in the FOV and determining, based on the SWIR image data, presence of water-based liquids in the FOV.

System and method for utilizing SWIR sensing in cleaning machines

Described herein are systems and methods for on-the-fly detection of a defective pixel in an image that may include: receiving the image; for each analyzed pixel in the image, selecting an analyzed cell, wherein the analyzed cell includes a plurality of pixels; performing statistical distribution analysis for the plurality of pixels in the analyzed cell; determining an allowed statistical distance for the analyzed pixel relative to the analyzed cell; and determining that the analyzed pixel is a defective pixel if a computed statistical distance of the analyzed pixel exceeds the allowed statistical distance.

Systems and methods for statistics-based defect pixel detection

Techniques are disclosed to accurately measure the integration or accumulation of charge measured by photosite readout circuitry due to a photodiode generated current, which is generated by a photodiode as a result of impinging light reflected onto the photodiode that forms part of an imaging sensor. The techniques described herein address shortcomings of photosite operation by using a series of sequential switching states that function to maintain the charge accumulated during idle sampling times between active detection windows.

Photosite circuit using switched operational phases

Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

Germanium based focal plane array for the short infrared spectral regime

Depth sensors comprising a focal plane array with photosites (PSs) directed in different directions, each PS operable to detect light arriving from an instantaneous field of view (IFOV) of the PS, a readout-set of readout circuitries (ROCs), each ROC coupled to readout-group PSs by multiple switches and operable to output an electric signal indicative of an amount of light impinging on the readout-group PSs when the read-out group is connected to the respective ROC via at least one of the switches, a controller operable to change switching states of the switches, such that at different times different ROCs of the readout-set are coupled to the readout-group and are exposed to reflections from different distances, and a processor operable to obtain the electric signals from the readout-set indicative of detected levels of reflected light collected from the IFOVs of the readout-group and to determine depth information for an object.

Systems, methods and computer program products for generating depth images based on short-wave infrared detection information

Germanium (Ge)-Silicon (Si) structures, optoelectronic devices and method for forming same. A structure comprises a Si substrate, a Ge seed layer and a Ge epitaxial layer separated by respective interfaces that share a common plane normal, wherein the Si substrate and the Ge seed layer have a same first doping type with a first doping level, and a locally doped region formed in the Si layer adjacent to the Ge seed layer and having a second doping type with a second doping level, wherein the locally doped region is designed to reduce leakage currents between the Si substrate and the Ge epitaxial layer when an electrical bias is applied to the structure.

Low leakage current germanium-on-silicon photo-devices

Methods to solve the problem of performing fusion of images acquired with two cameras with different type sensors, for example a visible (VIS) digital camera and an short wave infrared (SWIR) camera, include performing image space equalization on images acquired with the different type sensors before performing rectification and registration of such images in a fusion process.

Multi-view image fusion by image space equalization and stereo-based rectification from two different cameras

Electro-optical (EO) systems comprising a photodetector array (PDA) comprising a plurality of photosites (PSs), each PS operative to output detection signals for different frames, the detection signal output for a frame by the respective PS being indicative of an amount of light impinging on the respective PS during a respective frame exposure time (FET); a usability filtering module operative to first determine for each PS that the PS is unusable based on a first FET, and to later determine that the PS is usable based on a second FET that is shorter than the first FET; and a processor operative to generate images based on frame detection levels of the plurality of PSs.

Electro-optical systems, methods and computer program products for image generation

Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Systems and methods for compensating for dark current in a photodetecting device

Systems, methods, and computer program products for image generation

Methods and systems for active SWIR imaging using germanium receivers

Focal plane arrays (FPAs) of plasmonic enhanced pyramidal silicon Schottky photodetectors (PDs) operative in the short wave infrared (SWIR) regime, and imaging systems combining such FPAs with active illumination sources and readout integrated circuit (ROIC). Such imaging systems enable imaging in the SWIR regime using inexpensive silicon detector arrays, specifically in vehicular environments in which such an imaging system may be mounted on a vehicle and image various moving and stationary targets.

System and method for short-wave-infra-red (SWIR) sensing and imaging

Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Ge&#x2014;GaAs heterojunction-based SWIR photodetector

Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.

Growing community of inventors

Tel Aviv, Israel

Avraham Bakal