Nova Measuring Instruments Ltd.

Avi Ravid

David Scheiner

Moshe Finarov

Vladimir Machavariani

Amit Weingarten

A method and system are presented for use in controlling a process of material removal from the surface of a patterned structure, by measuring at least one of residue, erosion, dishing and corrosion effects in the structure induced by this process. The structure is imaged utilizing phase modulation of light reflected from the structure, and a phase map of the structure is thereby obtained. This phase map is analyzed and data indicative of light reflective properties of layer stacks of the structure is utilized to determine a phase difference between light reflected from a selected measured site and at least one reference site spaced-apart from the selected site. The phase difference is thus indicative of the measured effect.

Method and system for monitoring a process of material removal from the surface of a patterned structure

A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects

A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least two structures aligned along a vertical axis in a spaced-apart parallel relationship, each structure comprising at least one pattern zone containing spaced-apart metal regions, the test structure thereby comprising at least one pair of vertically aligned upper and lower pattern zones. The upper and lower pattern zones in each pair have different patterns oriented with respect to each other such that the metal regions of the lower pattern are located underneath the spaces between the metal regions of the upper pattern.

Test structure for metal CMP process control

A method for measuring at least one desired characteristic of a patterned article is presented. The article is of a kind containing a plurality of different pattern elements located at different sites, each including a stack of layers. An optical model is provided, which is based on a set of parameters corresponding to predetermined characteristics of the article, and is capable of generating theoretical data indicative of spectral response of the article. The set of parameters includes parameters corresponding to geometrical characteristics of the pattern elements. Reference data is prepared containing a plurality of sets of parameters for at least some of the different pattern elements. A spectral measurement of light response is carried out at a selected site of the patterned article and measured data is generated. By varying said parameters' sets, the optical model is optimized, and then the theoretical spectral responses obtained through the optimized optical model and from the measured data is analyzed to determine therefrom the at least one desired characteristic.

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Kfar Saba, Israel

Avi Ravid