Applied Materials, Inc.

Motorola Corporation

Appled Materials, Inc.

Avgerinos V Gelatos

Mei Yin Chang

Srinivas Gandikota

Xinyu Fu

Amit Khandelwal

Yu Lei

Bo Zheng

Kai Wu

Takashi Kuratomi

Bhushan N Zope

Ming Xi

Michael Xiaoxuan Yang

Raymond Hoiman Hung

Xianmin Tang

Alfred W Mak

Vikash Banthia

Mathew Abraham

Hua Chung

Seshadri Ganguli

Jeong Soo Byun

Sang Ho Yu

Salvador P Umotoy

Steve G Ghanayem

Xiaoxiong Yuan

Yi Xu

Ken Kaung Lai

Atif Noori

Sang-Hyeob Lee

Hongbin Fang

David P Thompson

Ashok K Sinha

He Ren

Joshua Collins

Kazuya Daito

David T Or

Gwo-Chuan Tzu

Moris Kori

Sang-Ho Yu

Kavita Shah

Xi Cen

Frederick C Wu

Faruk Gungor

Pingyan Lei

Randhir P S Thakur

Mehul B Naik

Feng Quan Liu

Muhammad M Rasheed

Dien-Yeh Wu

Hao Chen

Christophe Marcadal

Joung Joo Lee

Yu Wen Chang

Muhannad Mustafa

Chen-An Chen

Tae Hong Ha

Murali K Narasimhan

Stanley Michael Filipiak

Kevin Kashefi

Lin Dong

Wei Lei

Michael P Karazim

David Michael Thompson

Stephen S Poon

Xuesong Lu

Jingjing Liu

Mang-Mang Ling

Olkan Cuvalci

Guoqiang Jian

Walter Benjamin Glenn

Jennifer Y Sun

Mark Joseph Saly

Shashank Sharma

Paul F Ma

Jeffrey W Anthis

Gaurav Thareja

Yixiong Yang

Zhebo Chen

Nicolas L Breil

Lawrence Chung-Lai Lei

Wei V Tang

Sanjay S Natarajan

Jianxin Lei

Joel M Huston

Annamalai Lakshmanan

Benjamin Schmiege

Robert W Fiordalice

Lei Zhou

Liqi Wu

Michael Sterling Jackson

Manoj Vellaikal

Rabiul Islam

Kevin D Lucas

Jiang Lu

Ravi Rajagopalan

Steven D Marcus

Weifeng Ye

Chi-Chou Lin

Ping Han Hsieh

Jing Zhou

Ramnath Venkatraman

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl), hydrogen (H) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition

A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and/or a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and/or a p-MOS cavity in an exposed surface of the p-MOS region, wherein the cavity shaping process is configured to increase the surface area of the exposed surface of the n-MOS region or the p-MOS region. In some embodiments, the method includes performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.

Electrical contact cavity structure and methods of forming the same

Methods for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.

Methods for controlling contact resistance in cobalt-titanium structures

Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

Process kit for a substrate support

Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI, where R is one or more of a C-Calkyl, C-Ccycloalkyl, C-Calkenyl, or C-Calkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

Method of depositing metal films

Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

Dual silicide process using ruthenium silicide

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WClor WCl.

Methods for depositing fluorine/carbon-free conformal tungsten

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

Multi-step pre-clean for selective metal gap fill

Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

Apparatuses and methods of protecting nickel and nickel containing components with thin films

Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

Substrate processing chamber having heated showerhead assembly

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl), hydrogen (H) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.

Methods and apparatus for controlling contact resistance in cobalt-titanium structures

The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

Method for forming a metal gapfill

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Redwood City, CA, United States of America

Avgerinos V Gelatos