Globalfoundries Singapore Pte. Ltd.

Vanguard International Semiconductor Singapore Pte. Ltd.

Aveek Nath Chatterjee

Rakesh Kumar

Jia Jie Xia

Nagarajan Ranganathan

Siddharth Chakravarty

Ramachandramurthy Pradeep Yelehanka

Jaime Viegas

Mateusz Tomasz Madzik

Provided in accordance with the herein described exemplary embodiments are piezo micro-machined ultrasonic transducers (pMUTs) each having a first electrode that includes a first electrode portion and a second electrode portion. The second electrode portion is separately operable from the first electrode portion. A second electrode is spaced apart from the first electrode and defines a space between the first electrode and the second electrode. A piezoelectric material is disposed in the space. Also provided are arrays of pMUTs wherein individual pMUTs have first electrode portions operably associated with array rows and second electrode portions operably associated with array columns.

Electrode arrangement for a pMUT and pMUT transducer array

Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended structure in a cavity. Further, the method includes etching the semiconductor substrate to form an acoustic port through the semiconductor substrate configured to allow acoustic pressure to deflect the suspended structure.

MEMS device for harvesting sound energy and methods for fabricating same

Three-axis monolithic microelectromechanical system (MEMS) accelerometers and methods for fabricating integrated capacitive and piezo accelerometers are provided. In an embodiment, a three-axis MEMS accelerometer includes a first sensing structure for sensing acceleration in a first direction. Further, the three-axis MEMS accelerometer includes a second sensing structure for sensing acceleration in a second direction perpendicular to the first direction. Also, the three-axis MEMS accelerometer includes a third sensing structure for sensing acceleration in a third direction perpendicular to the first direction and perpendicular to the second direction. At least one sensing structure is a capacitive structure and at least one sensing structure is a piezo structure.

Three-axis monolithic MEMS accelerometers and methods for fabricating same

Integrated MEMS devices for pressure sensing and inertial sensing, methods for fabricating such integrated devices, and methods for fabricating vertically integrated MEMS pressure sensor/inertial sensor devices are provided. In an example, a method for fabricating an integrated device for pressure and inertial sensing includes forming a MEMS pressure sensor on a first side of a semiconductor substrate. The method further includes forming a MEMS inertial sensor on a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

Integrated MEMS pressure sensor and MEMS inertial sensor

Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

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Singapore, Singapore

Aveek Nath Chatterjee