Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Aurélien Suhm

Salim Boutami

Emmanuel Defay

François Templier

Pierre Joly

Maxime Argoud

Stéphane Getin

Bernard Aventurier

Gwenaël Le Rhun

Stéphane Altazin

Jérémy Bilde

A method for manufacturing an optoelectronic device including an array of diodes and an array of colour conversion portions includes providing the array of diodes, and the upper electrode layers; depositing a dielectric layer having a substantially zero surface potential; applying a potential difference between an electrode and the first upper electrode layers, resulting in the formation of first patterns with non-zero surface potential in the dielectric layer; and producing the first colour conversion portions, by contacting the dielectric layer with a colloidal solution containing first photoluminescent particles.

Method for manufacturing a colour-conversion optoelectronic device, including a step of polarising an electret layer in a localised manner by means of the upper electrodes of the diodes

A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.

Method for coating chips

The invention relates to a diffuserintended to be facing a light sourcecomprising a transmission layerand a diffusion layerintended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.

Diffusive structure for light source

An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

Integrated capacitor comprising an electrically insulating layer made of an amorphous perovskite-type material and manufacturing process

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Grenoble, France

Aurélien Suhm