Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

S.o.i.tec Silicon on Insulator Technologies

Soitec

Commissariat a L'energie Atomique Et Aux Energies

Aurélie Tauzin

Bruce Faure

Franck Fournel

Konstantin Bourdelle

Bruno Imbert

Ian Cayrefourcq

Frédéric Mazen

Frederic Mazen

Thomas Signamarcheix

Eric Guiot

Chrystelle Lagahe-Blanchard

Nguyet-Phuong Nguyen

Emmanuelle Lagoutte

Jérôme Dechamp

Christelle Lagahe-Blanchard

Arnaud Garnier

Jean-Sébastien Moulet

Sébastien Personnic

Frédéric Laugier

Florence Madeira

Anne-Sophie Stragier

An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm&#xb7;cm, preferably less than 5 mOhm&#xb7;cm.

Engineered substrate with embedded mirror

The method is carried out of a first substrate having a first layer made of a first material with a second substrate having a second layer made of a second material, the first material and the second material being of different natures and selected from alloys of elements of columns III and V, the method having the steps of: a) providing the first substrate and the second substrate, b) bringing the first substrate into contact with the second substrate so as to form a bonding interface between the first layer and the second layer, c) performing a first heat treatment at a first predefined temperature, d) thinning one of the substrates, e) depositing, at a temperature less than or equal to the first predefined temperature, a barrier layer, on the thinned substrate, and f) performing a second heat treatment at a second predefined temperature, greater than the first predefined temperature.

Direct bonding method

A method for transferring InP film onto a stiffener substrate, the method including: providing a structure comprising an InP surface layer and an underlying doped thin InP layer; implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer; placing the surface layer in close contact with a stiffener substrate; and applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate.

Method for transferring InP film

A process for forming a layer () of semiconductor material from a substrate (), or donor substrate, made of the same semiconductor material is described, comprising:

Process for forming a crack in a material

A process for detaching a silicon thin film from a donor substrate by cleaving, includes implanting species within the donor substrate to form a weak layer. The species are implanted at a depth at least equal to the thickness of the thin film to be detached. There is a heat treatment at 450&#xb0; C. or more and cleaving is along the weak layer. The implanting species includes implanting boron, helium and hydrogen with implantation energies such that: helium and boron concentration maxima are obtained at substantially the same depth, separated by at most 10 nm; and a hydrogen concentration maximum is obtained at a depth at least 20 nm greater than that of the helium and boron concentration maxima. The implantation dose of boron is at least equal to 5&#xd7;10B/cmand the dose of helium and hydrogen is at least 10atoms/cmand at most 4&#xd7;10atoms/cm.

Method for detaching a silicon thin film by means of splitting, using triple implantation

A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.

Method for preparing thin GaN layers by implantation and recycling of a starting substrate

A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth esmaller than the first depth e, and so as to leave an intermediate layer between the depths eand e, in which intermediate layer protons incorporated during the proton exchange step remain. The depth edefines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.

Method for transferring a thin layer by proton exchange

A method for transferring a micro-technological layer includes preparing a substrate having a porous layer buried beneath a useful surface, forming an embrittled zone between it and the surface, bonding the substrate to a supporting substrate, causing detachment at the porous layer by mechanical stress to obtain a first substrate remnant, and a bare surfaced detached layer joined to the supporting substrate, performing technological steps on the bared surface of the detached layer, bonding the detached layer, by the surface to which the technological steps had been applied, to a second supporting substrate, causing detachment, at the embrittled zone, by heat treatment to obtain a detached layer remnant joined to the second supporting substrate, and the detached layer remnant joined to the first supporting substrate.

Method for transferring at least one micro-technological layer

A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation

A method for forming a plurality of thin films from a microtechnological donar substrate with a view to recycling of the donor substrate, the method including exposing a face of the donor substrate by fracturing the donor substrate along a layer weakened by implantation and placing the exposed face in a bath and applying ultrasound with a frequency of between 10 kHz and 80 kHz under conditions suitable for causing cavitation along the exposed face. In the case of a silicon donor substrate, the bath is exposed to an ultrasound power per unit volume of greater than 5 W/I, at a power of greater than 10 W with a duration of greater than 1 minute, and at a temperature between 1&#xb0; C. and 100&#xb0; C.

Method for the ultrasonic planarization of a substrate, from one surface of which a buried weakened layer has been uncovered by fracture

The invention concerns a method for forming a growth mask on the surface of an initial crystalline substrate, comprising the following steps: the method being characterized in that the formation of the pattern is obtained by ion implantation carried out in the surface layer of the initial substrate underlying the layer of second material, the implantation conditions being such that they cause, directly or after a heat treatment, on said face of the initial substrate, the appearance of exfoliated zones of first material leading to the localized removal of the zones of second material covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows on the initial substrate. The invention further concerns methods for forming a crystalline thin film and transferring this thin film onto a host substrate.

Method for forming a detachable substrate including implantation and exfoliation

A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.

Method of detaching a thin film by melting precipitates

A method of fabricating a thin film is disclosed. The method comprises: implanting ions by bombarding a face of a substrate comprising a semiconductor material to form a concentrated layer of the implanted ions at a predetermined mean depth in the substrate, the concentrated layer and the face of the substrate defining a thin film therebetween; trapping contaminants included in the substrate or the thin film, in the concentrated layer by heat treating the substrate such that the heat treatment does not split the substrate at the concentrated layer; detaching the thin film from the substrate after the trapping by splitting the substrate at the concentrated layer; and withdrawing a zone of the thin film perturbed by the trapping and the detaching.

Method of fabricating a thin film

A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps:

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Saint Egreve, France

Aurélie Tauzin