Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Carl Zeiss Ag

Fujifilm Corporation

Aurelian Dodoc

Wilhelm Ulrich

Alexander Epple

Hans-Juergen Mann

Rudolf Von Buenau

David R Shafer

Hans-Juergen Rostalski

Susanne Beder

Heiko Feldmann

Wolfgang Singer

Daniel Kraehmer

Toralf Gruner

Helmut Beierl

Karl-Heinz Schuster

Michael Totzeck

Olaf Conradi

Vladimir Kamenov

Sascha Bleidistel

Ulrich Loering

Marco Pretorius

Christoph Zaczek

Christoph Menke

Julian Kaller

Johannes Wangler

Hubert Holderer

Bernhard Gellrich

Martin Endres

Hiroki Saito

Hans-Jürgen Mann

Johannes Zellner

Wilfried Clauss

Hans-Jochen Paul

Gerhard Fuerter

Sascha Migura

Karl Heinz Schuster

Gerhard Braun

Joerg Mallmann

Thomas Okon

Jean-Claude Perrin

Andreas Wurmbrand

Juergen Fischer

Ryoko Tomioka

Holger Walter

Stephan Muellender

Franz-Josef Stickel

Albrecht Ehrmann

Arif Kazi

Gisela Von Blanckenhagen

Rafael Egger

Joachim Wietzorrek

Joern Weber

Joerg Schultz

Vladan Blahnik

Dieter Bader

Alexander Sohmer

Albrecht Ranck

Juergen Klein

Roland Loercher

Holger Sehr

Michael Pollmann

Claus Zahlten

Artur Moegele

Michael Raum

Christian Bannert

Vladimir Kamenow

Hans-Jürgen Rostalski

Rudolf Von BÜNAU

Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Microlithography projection objective

A projection objective configured to image an object field in an object plane into an image field in an image field plane includes a reflective unit, a first refractive unit, and a second refractive unit. An optical axis of the first refractive unit is parallel to but displaced from an optical axis of the second refractive unit. The reflective unit includes a first curved mirror and a second curved mirror. The second curved mirror is immediately downstream from the first curved mirror in a path of light from the object plane to the image plane. The projection objective is a microlithography projection objective.

Catadioptric projection objective with parallel, offset optical axes

A catadioptric projection objective has a first objective part, defining a first part of the optical axis and imaging an object field to form a first real intermediate image. It also has a second, catadioptric objective part forming a second real intermediate image using the radiation from the first objective part. The second objective part has a concave mirror and defines a second part of the optical axis. A third objective part images the second real intermediate image into the image plane and defines a third part of the optical axis. Folding mirrors deflect the radiation from the object plane towards the concave mirror; and deflect the radiation from the concave mirror towards the image plane. The first part of the optical axis defined by the first objective part is laterally offset from and aligned parallel with the third part of the optical axis.

Catadioptric projection objective with intermediate images

A macro lens system includes, in this order from an object side: a positive first lens group; a negative second lens group; a positive third lens group; a positive fourth lens group; a positive fifth lens group; and a negative sixth lens group. The first lens group is constituted by three lenses. The second lens group, the fourth lens group, and the fifth lens group are independently moved in the direction of the optical axes thereof when focusing from an object at infinity to an object at a most proximate distance.

Macro lens system and imaging apparatus

A mirror (') for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P&#x2032;&#x2033;) consisting of a periodic sequence of at least two periods (P) of individual layers, wherein the periods (P) include two individual layers composed of different materials for a high refractive index layer (H&#x2032;&#x2033;) and a low refractive index layer (L&#x2032;&#x2033;), wherein the layer arrangement includes at least one surface protecting layer (SPL, L) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.

Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective

An optical imaging system serving for imaging a pattern arranged in an object plane of the imaging system into an image plane of the imaging system with the aid of electromagnetic radiation from a wavelength range around a main wavelength &#x3bb;has a multiplicity of mirrors. Each mirror has a mirror surface having a reflective layer arrangement having a sequence of individual layers.

Reflective optical imaging system

An imaging optical system has a plurality of mirrors, which image an object field in an object plane into an image field in an image plane. A reflection face of at least one of the mirrors is configured as a free form face which cannot be described by a rotationally symmetrical function. The object field has an aspect ratio greater than 1. A ratio of a minimal and a maximal transverse dimension of the object field can be less than 0.9.

Imaging optical system and illumination optical system

An optical system for imaging an object on an image acquisition unit. The optical system, from the object, comprises a first lens unit, a second lens unit, a third lens unit and a fourth lens unit in the direction of the image acquisition unit. The first lens unit comprises at least one lens group with negative refractive power. The second lens unit comprises at least one lens group with positive refractive power and the third lens unit comprises at least one lens group with negative refractive power. The second lens unit and the third lens unit overall comprise at least three lens groups. From the first lens unit in the direction of an image acquisition unit, the first lens group, the second lens group and then the third lens group are arranged. The three lens groups have a movable design for adjusting the focal length of the optical system.

Optical system for imaging an object

Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.

Imaging optics and projection exposure installation for microlithography with an imaging optics

A mirror for the EUV wavelength range () having a layer arrangement (P) applied on a substrate (S), the layer arrangement having a periodic sequence of individual layers, where the periodic sequence has at least two individual layers&#x2014;forming a period&#x2014;composed respectively of silicon (Si) and ruthenium (Ru). Also disclosed are a projection objective for microlithography () including such a mirror, and a projection exposure apparatus for microlithography having such a projection objective ().

Mirror for the EUV wavelength range, projection objective for microlithography comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective

A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D, a maximum image field height Y', and an image side numerical aperture NA; wherein COMP=D/(Y&#x2032;&#xb7;NA) and wherein the condition COMP&#x3c;10 holds.

Immersion catadioptric projection objective having two intermediate images

Growing community of inventors

Heidenheim, Germany

Aurelian Dodoc